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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DHG30IM600PC-TRLDIODE GEN PURP 600V 30A TO263 IXYS |
3,874 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 2.37 V @ 30 A | |
|
S6FDIODE GEN PURP 600V 2A AXIAL Semtech Corporation |
3,912 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 5V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
1N645UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,939 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
1N6623USDIODE GEN PURP 880V 1A A-MELF Microchip Technology |
3,959 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 50 ns | 500 nA @ 880 V | 880 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
IDW24G65C5BXKSA2DIODE SCHOTTKY 650V 12A TO247-3 Rochester Electronics, LLC |
840 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A |
|
|
JANTX1N6624UDIODE GEN PURP 900V 1A A-MELF Microchip Technology |
3,976 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 900 V | 900 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
VS-30EPU12LHN3DIODE GEN PURP 1.2KV 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 220 ns | 145 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.68 V @ 30 A |
|
|
S4FDIODE GEN PURP 400V 2A AXIAL Semtech Corporation |
2,094 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 5V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.95 V @ 2 A | |
|
C6D10065Q-TR10A 650V SIC SCHOTTKY QFN Wolfspeed, Inc. |
2,457 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT),- | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 611pF @ 0V, 1MHz | - | 50 µA @ 650 V | 650 V | 39A (DC) | -55°C ~ 175°C | 1.5 V @ 10 A | ||
|
1N6622E3/TRRECTIFIER UFR,FRR Microchip Technology |
2,002 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | - | Active | Through Hole | - | 30 ns | - | - | - | - | 1.6 V @ 2 A | ||
|
JANTXV1N5550DIODE GEN PURP 200V 5A AXIAL Microchip Technology |
2,641 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
1N5826DIODE SCHOTTKY 20V 15A DO5 GeneSiC Semiconductor |
3,199 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 10 mA @ 20 V | 20 V | 15A | -65°C ~ 150°C | 440 mV @ 15 A | |
|
VS-APH3006HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,071 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A |
|
MUR5010DIODE GEN PURP 100V 50A DO5 GeneSiC Semiconductor |
2,757 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 100 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
|
FFSB0665ADIODE SBD 6A 650V D2PAK-3 onsemi |
3,575 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 361pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.75 V @ 6 A | |
|
JANTXV1N5811US/TRRECTIFIER UFR,FRR Microchip Technology |
3,602 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
|
JANTXV1N5551DIODE GEN PURP 400V 5A WEC |
3,517 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 5A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
1N5827DIODE SCHOTTKY 30V 15A DO5 GeneSiC Semiconductor |
3,284 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 10 mA @ 20 V | 30 V | 15A | -65°C ~ 150°C | 470 mV @ 15 A | |
|
VS-EPH3006HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,614 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A |
|
|
MUR5005DIODE GEN PURP 50V 50A DO5 GeneSiC Semiconductor |
2,219 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 50 V | 50A | -55°C ~ 150°C | 1 V @ 50 A |
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