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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTE5800R-50 PRV 3A AXIAL LEAD NTE Electronics, Inc |
15,465 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.2 V @ 9.4 A | |
|
DD350N12K-KRECTIFIER DIODE MODULE Rochester Electronics, LLC |
237 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
FFPF06U40STURECTIFIER DIODE Rochester Electronics, LLC |
8,476 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 20 µA @ 400 V | 400 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
DD800S17H4_B2DDXS17F - RECTIFIER DIODE MODULE Rochester Electronics, LLC |
120 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
RGP15JR-600V 1.5A FAST SW NTE Electronics, Inc |
3,166 | - |
RFQ |
Scheda tecnica |
Bag | RGP15 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | - | 1.3 V @ 1.5 A |
|
|
DD1200S17H4_B2DD1200S17 - RECTIFIER DIODE MODU Rochester Electronics, LLC |
2,535 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BAS16HT1GDIODE GEN PURP 100V 200MA SOD323 onsemi |
3,932 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 100 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
FFPF15U20STURECTIFIER DIODE, 15A, 200V Rochester Electronics, LLC |
2,810 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 200 V | 200 V | 15A | -65°C ~ 150°C | 1.2 V @ 15 A | |
|
STPS3H100UDIODE SCHOTTKY 100V 3A SMB STMicroelectronics |
2,692 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 100 V | 100 V | 3A | 175°C (Max) | 840 mV @ 3 A | |
|
MBRP745TURECTIFIER DIODE Rochester Electronics, LLC |
2,443 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 650 mV @ 7.5 A | |
|
V30100S-E3/4WDIODE SCHOTTKY 100V 30A TO220AB Vishay General Semiconductor - Diodes Division |
402 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
|
1N5819R-SCHOTTKY 40V 1A NTE Electronics, Inc |
1,792 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
IDH04G65C6XKSA1DIODE SCHOTTKY 650V 12A TO220-2 Infineon Technologies |
2,765 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 205pF @ 1V, 1MHz | 0 ns | 14 µA @ 420 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A | |
|
FFB05U120STMRECTIFIER DIODE Rochester Electronics, LLC |
1,600 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 100 ns | 5 µA @ 1.2 V | 1.2 V | 5A | -65°C ~ 150°C | 3.5 V @ 5 A | |
|
APT60D60BGDIODE GEN PURP 600V 60A TO247 Microchip Technology |
2,470 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 130 ns | 250 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.8 V @ 60 A | |
|
|
MURH8100ERECTIFIER, AVALANCHE, 4A, 1000V, Rochester Electronics, LLC |
1,210 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
AR4PK-M3/86ADIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,623 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
ES3A-M3/57TDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,782 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
NSB8JTHE3_B/IDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,043 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
PMEG2002AESFBYLDIODE SCHTKY 20V 200MA DSN0603B2 Nexperia USA Inc. |
3,234 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 25pF @ 1V, 1MHz | 1.9 ns | 45 µA @ 20 V | 20 V | 200mA | 125°C (Max) | 375 mV @ 200 mA |
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