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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR804DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation |
3,869 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
5817SMJE3/TR13DIODE SCHOTTKY 20V 1A DO214AA Microchip Technology |
2,215 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A | |
|
VT760-M3/4WDIODE SCHOTTKY 7.5A 60V TO-220AC Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
|
ES3B-M3/57TDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,700 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
NSB8KTHE3_B/IDIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
RB550VM-40FHTE-17RB550VM-40FH IS LOW V F Rohm Semiconductor |
2,884 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 40 µA @ 40 V | 40 V | 200mA | 150°C (Max) | 510 mV @ 200 mA |
|
|
SR806 R0GDIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation |
3,362 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
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|
LSM335JE3/TR13DIODE SCHOTTKY 35V 3A DO214AB Microchip Technology |
3,531 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 35 V | 35 V | 3A | -55°C ~ 150°C | 520 mV @ 3 A | |
|
V12P15HM3/HDIODE SCHOTTKY 150V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 150°C | 1.08 V @ 12 A |
|
|
ES3C-M3/57TDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
NSB8MTHE3_B/IDIODE GEN PURP 1KV 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,572 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
CSA2M-E3/IDIODE GPP 2A 1000V DO-214AC SMA Vishay General Semiconductor - Diodes Division |
2,483 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 1000 V | 1000 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SE40PB-M3/87ADIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A (DC) | -55°C ~ 175°C | 1.05 V @ 4 A | |
|
|
LSM340JE3/TR13DIODE SCHOTTKY 40V 3A DO214AB Microchip Technology |
3,734 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 520 mV @ 3 A | |
|
|
V12P15HM3/IDIODE SCHOTTKY 150V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,400 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 150°C | 1.08 V @ 12 A |
|
|
ES3D-M3/57TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
NSB8ATHE3_B/PDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,786 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
SL42-M3/9ATDIODE SCHOTTKY 4A 20V DO-214AB Vishay General Semiconductor - Diodes Division |
3,538 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
|
SE40PD-M3/87ADIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,332 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 1.05 V @ 4 A | |
|
|
LSM345JE3/TR13DIODE SCHOTTKY 45V 3A DO214AB Microchip Technology |
2,045 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 3A | -55°C ~ 150°C | 520 mV @ 3 A |
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