+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRB10H60HE3_B/PDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,401 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A |
|
BAW78DH6327XTSA1DIODE GEN PURP 400V 1A SOT89 Infineon Technologies |
3,670 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 10pF @ 0V, 1MHz | 1 µs | 1 µA @ 400 V | 400 V | 1A (DC) | 150°C (Max) | 1.6 V @ 1 A |
|
|
VB20100S-M3/4WDIODE SCHOTTKY 20A 100V TO-263AB Vishay General Semiconductor - Diodes Division |
3,144 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | ||
|
CFRC307-GDIODE GEN PURP 1KV 3A DO214AB Comchip Technology |
2,711 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 1000 V | 1000 V | 3A | 150°C (Max) | 1.3 V @ 3 A | |
|
VS-5EWH06FNTRHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
SFF2006G C0GDIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation |
2,479 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 20A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
SBR10B45P5-7DDIODE SBR 45V 10A POWERDI5 Diodes Incorporated |
2,028 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SBR® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 380 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 550 mV @ 10 A |
|
MBRF10100 C0GDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
2,704 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
|
PDS540Q-13DIODE SCHOTTKY 40V 5A POWERDI5 Diodes Incorporated |
3,434 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 520 mV @ 5 A |
|
|
CFRC303-GDIODE GEN PURP 200V 3A DO214AB Comchip Technology |
3,057 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 5 µA @ 200 V | 200 V | 3A | 150°C (Max) | 1.3 V @ 3 A | |
|
|
VS-5EWH06FNTRLHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,984 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
V20150S-E3/4WDIODE SCHOTTKY 150V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,751 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A |
|
SS19L RUGDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
3,803 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
EL02ZVDIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,761 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
|
V20150S-M3/4WDIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division |
3,394 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
|
AL01ZVDIODE GEN PURP 200V 1A AXIAL Sanken |
3,689 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
VS-5EWH06FNTRRHM3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
CMR2-10 BK PBFREEDIODE GEN PURP 1KV 2A SMB Central Semiconductor Corp |
2,241 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2.5 µs | 5 µA @ 1000 V | 1000 V | 2A | -65°C ~ 150°C | 1.1 V @ 2 A | |
|
RGP25K-E3/54DIODE GEN PURP 800V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,420 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
|
V30100SG-M3/4WDIODE SCHOTTKY 30A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
