+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V15P6HM3_A/HDIODE SCHOTTKY 60V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,912 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.6 mA @ 60 V | 60 V | 15A | -40°C ~ 150°C | 620 mV @ 15 A |
|
JAN1N4148UR-1DIODE GEN PURP 100V 200MA DO213 Microchip Technology |
2,382 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2.8pF @ 1.5V, 1MHz | 20 ns | 25 nA @ 20 V | 100 V | 200mA | -65°C ~ 175°C | 800 mV @ 10 mA |
|
VS-12TQ045S-M3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,176 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
HSM170JE3/TR13DIODE SCHOTTKY 1A 70V SMAJ Microchip Technology |
3,734 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
SF45GHR0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
2,140 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
UH3BHE3_A/IDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,499 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
PDS5100Q-13DDIODE SCHOTTKY 100V 5A POWERDI5 Diodes Incorporated |
3,077 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 790 mV @ 5 A |
|
|
VS-10ETF12STRL-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,886 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
MBRB10100-E3/4WDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
HSM180JE3/TR13DIODE SCHOTTKY 80V 1A DO214BA Microchip Technology |
3,348 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
|
SF46GHR0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,134 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
|
UH3CHE3_A/IDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,628 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
BYT56K-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,738 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
VS-10ETF02STRR-M3DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,804 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
MBRB1090-E3/4WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,806 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
FCH10A20DIODE SCHOTTKY 200V 10A TO-220 F KYOCERA AVX |
2,621 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 900 mV @ 5 A | |
|
|
V10PM45-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,684 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1850pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 600 mV @ 10 A |
|
|
UH3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,559 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
BYW74TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,742 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-10ETF04STRL-M3DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,031 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
