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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF5400-TRDIODE GEN PURP 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,206 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
BYV29F-300HE3_A/PDIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,266 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
BYWB29-50-E3/45DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,714 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
V35DM120-M3/IDIODE SCHOTTKY 120V 6.3A TO263AC Vishay General Semiconductor - Diodes Division |
2,770 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 120 V | 120 V | 6.3A | -40°C ~ 175°C | 1.05 V @ 35 A |
|
EL 1ZV1DIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,710 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
|
ES01ADIODE GEN PURP 600V 700MA AXIAL Sanken |
2,240 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 600 V | 600 V | 700mA | -40°C ~ 150°C | 3 V @ 800 mA | |
|
CMR3U-01M TR13 PBFREEDIODE GEN PURP 100V 3A SMB Central Semiconductor Corp |
2,070 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1 V @ 3 A | |
|
|
BYV29F-400HE3_A/PDIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,629 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
VF20150SG-E3/4WDIODE SCHOTTKY 150V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
3,937 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
SBR20M45D1Q-13DIODE SBR 45V 20A TO252 Diodes Incorporated |
2,798 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 175°C | 610 mV @ 20 A |
|
|
EM 2AV0DIODE GEN PURP 600V 1.2A AXIAL Sanken |
2,179 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |
|
|
EU1DIODE GEN PURP 400V 250MA AXIAL Sanken |
2,500 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |
|
SR1204HR0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
3,962 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |
|
|
GCQ10A06DIODE SCHOTTKY 60V 10A TO-220 KYOCERA AVX |
2,312 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 5 mA @ 60 V | 60 V | 10A | -40°C ~ 150°C | 580 mV @ 5 A | |
|
VS-HFA08TB60HN3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,671 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
VS-ETL1506-1-M3DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
3,421 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 210 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.07 V @ 15 A |
|
|
EM 2V0DIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,093 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |
|
|
EU01ZDIODE GEN PURP 200V 250MA AXIAL Sanken |
2,202 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |
|
BYW29-150-E3/45DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
MBR30170MFST3G170V 30A SCHOTTKY onsemi |
3,043 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 821pF @ 1V, 1MHz | - | 50 µA @ 170 V | 170 V | 30A (DC) | -55°C ~ 175°C | 890 mV @ 30 A |
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