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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8EWS08STRR-M3DIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
1N482B/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,565 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 30 V | 30 V | 200mA | -65°C ~ 200°C | 1 V @ 100 mA | ||
|
NRVB860MFST1GDIODE SCHOTTKY 60V 8A 5DFN onsemi |
2,116 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | 8A | -55°C ~ 175°C | 800 mV @ 8 A | |
|
NRVTS8100PFST3GDIODE SCHOTTKY 100V 8A TO277-3 onsemi |
3,882 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 660pF @ 1V, 1MHz | - | 100 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 820 mV @ 8 A | |
|
|
VS-8EWS12STRL-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,065 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
VS-HFA25TB60HN3DIODE GEN PURP 600V 25A TO220AC Vishay General Semiconductor - Diodes Division |
3,677 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
ISL9R1560P2DIODE GEN PURP 600V 15A TO220-2 onsemi |
245 | - |
RFQ |
Scheda tecnica |
Tube | Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Through Hole | - | 40 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.2 V @ 15 A |
|
STB12100TRDIODE SCHOTTKY 100V 12A D2PAK SMC Diode Solutions |
3,192 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 660pF @ 5V, 1MHz | - | 300 µA @ 100 V | 100 V | 12A | -55°C ~ 150°C | 750 mV @ 12 A | |
|
STTH4L06DIODE GEN PURP 600V 4A DO201AD STMicroelectronics |
2,928 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 3 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.3 V @ 3 A | |
|
US1KHE3_A/HDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
1,597 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
VS-8EWS12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
LSIC2SD065C10ASIC SCHOTTKY DIOD 650V 10A TO252 Littelfuse Inc. |
2,039 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
RURG80100-F085DIODE GEN PURP 1KV 80A TO247-2 onsemi |
2,528 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 250 µA @ 80 V | 1000 V | 80A | -65°C ~ 175°C | 1.9 V @ 80 A |
|
6A10GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,452 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A | |
|
SBRA8160NT3GDIODE SCHOTTKY 60V 1A 1202-SMB2 onsemi |
3,677 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 720 mV @ 1 A |
|
|
VS-8EWS12STRR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
APT60D40SGDIODE ULT FAST 60A 400V D3PAK Microchip Technology |
3,113 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 37 ns | 250 µA @ 400 V | 400 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | |
|
RFS60TZ6SGC13650V 60A, TO-247-2L, ULTRA SOFT Rohm Semiconductor |
3,477 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 10 µA @ 650 V | 650 V | 60A | 175°C | 2.3 V @ 60 A | ||
|
|
VS-5EWX06FNTR-M3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,045 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 20 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 2.9 V @ 5 A |
|
CMR1U-02M BK PBFREEDIODE GEN PURP 200V 1A SMA Central Semiconductor Corp |
3,798 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
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