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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-E4PU3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,486 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
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RFX10TF6SDIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor |
992 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 600 V | 600 V | 10A | 150°C (Max) | 2.5 V @ 10 A | |
|
UFS515G/TR13DIODE GEN PURP 150V 5A DO215AB Microchip Technology |
2,758 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 150 V | 150 V | 5A | -55°C ~ 175°C | 950 mV @ 5 A | |
|
SB330-E3/54DIODE SCHOTTKY 30V 3A DO201AD Vishay General Semiconductor - Diodes Division |
1,032 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 125°C | 490 mV @ 3 A | |
|
CDLL4148E3/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,333 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 5 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | ||
|
RD2006FR-HDIODE GEN PURP 600V 20A TO220F onsemi |
294 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 100 µA @ 600 V | 600 V | 20A | 150°C (Max) | 1.75 V @ 20 A | |
|
MUR240GDIODE GEN PURP 400V 2A AXIAL onsemi |
1,003 | - |
RFQ |
Scheda tecnica |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 65 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
RHRP15120-F102DIODE GEN PURP 1.2KV 15A TO220-2 onsemi |
602 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 100 µA @ 1200 V | 1200 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A | |
|
S12MC V7GDIODE GEN PURP 1KV 12A DO214AB Taiwan Semiconductor Corporation |
5,100 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
VS-EPU3006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
VS-5EWH06FNTRR-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,965 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
|
MBR20U100L-TPDIODE SCHOTTKY 100V 20A TO277 Micro Commercial Co |
3,644 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
DSEI8-06AS-TUBDIODE GEN PURP 600V 8A TO263AB IXYS |
2,326 | - |
RFQ |
Scheda tecnica |
Tube | FRED | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 20 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.5 V @ 8 A |
|
|
NHPV08S600GDIODE GEN PURP 600V 8A TO220-2 onsemi |
492 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 3.2 V @ 8 A | |
|
|
UFS520G/TR13DIODE GEN PURP 200V 5A DO215AB Microchip Technology |
2,697 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 950 mV @ 5 A | |
|
B320AF-13DIODE SCHOTTKY 20V 3A SMAF Diodes Incorporated |
7,301 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A | |
|
|
CD0.5A30DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,507 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 30 V | 30 V | 200mA | -65°C ~ 125°C | 500 mV @ 100 mA | ||
|
|
RHRP860-F085DIODE GEN PURP 600V 8A TO220AC onsemi |
415 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 100 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.1 V @ 8 A |
|
VS-APU3006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,445 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
RS2DAL M3G150NS, 2A, 200V, FAST RECOVERY R Taiwan Semiconductor Corporation |
6,880 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 11pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 150°C | 1.02 V @ 2 A |
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