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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRS20I40A(TE85L,QMDIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage |
2,826 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 2A | 150°C (Max) | 600 mV @ 2 A | |
|
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CRS20I40B(TE85L,QMDIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage |
3,998 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 2A | 150°C (Max) | 520 mV @ 2 A | |
|
|
CRS30I30A(TE85L,QMDIODE SCHOTTKY 30V 3A S-FLAT Toshiba Semiconductor and Storage |
2,052 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 3A | 150°C (Max) | 490 mV @ 3 A | |
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DSF01S30SC,L3FDIODE SCHOTTKY 30V 100MA SC2 Toshiba Semiconductor and Storage |
2,382 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 9.3pF @ 0V, 1MHz | - | 50 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 500 mV @ 100 mA | |
|
CRH01(TE85R,Q,M)DIODE GEN PURP 200V 1A SFLAT Toshiba Semiconductor and Storage |
2,896 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
CRS12(TE85L,Q,M)DIODE SCHOTTKY 60V 1A SFLAT Toshiba Semiconductor and Storage |
2,321 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 1A | -40°C ~ 150°C | 580 mV @ 1 A | |
|
|
CMS21(TE12L,Q,M)X35 PB-F DIODE M-FLAT MOQ=3000 V Toshiba Semiconductor and Storage |
3,756 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
CMF03(TE12L,Q,M)DIODE GEN PURP 900V 500MA M-FLAT Toshiba Semiconductor and Storage |
3,300 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 900 V | 900 V | 500mA | -40°C ~ 125°C | 2.5 V @ 500 mA | |
|
|
CRF03(TE85L,Q,M)DIODE GEN PURP 600V 700MA SFLAT Toshiba Semiconductor and Storage |
2,668 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 700mA | -40°C ~ 150°C | 2 V @ 700 mA | |
|
|
CRG05(TE85L,Q,M)DIODE GEN PURP 800V 1A S-FLAT Toshiba Semiconductor and Storage |
2,686 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 800 V | 800 V | 1A | -40°C ~ 150°C | 1.2 V @ 1 A | |
|
|
CMF01A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
3,672 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 2A | 150°C | 2 V @ 2 A | |
|
|
CMF02A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
3,789 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 1A | 150°C | 2 V @ 1 A | |
|
|
CMG03A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,709 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 2A | 150°C | 1.1 V @ 2 A | |
|
|
CMG06A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,009 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 1A | 150°C | 1.1 V @ 1 A | |
|
|
CRF03A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,365 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 700mA | 150°C | 2 V @ 700 mA | |
|
|
CRG04A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,885 | - |
RFQ |
Scheda tecnica |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 1A | 150°C | 1.1 V @ 1 A | |
|
|
CMS14(TE12L,Q,M)DIODE SCHOTTKY 60V 2A MFLAT Toshiba Semiconductor and Storage |
3,147 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 580 mV @ 2 A | |
|
CMS07(TE12L,Q,M)DIODE SCHOTTKY 30V 2A MFLAT Toshiba Semiconductor and Storage |
2,889 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -40°C ~ 150°C | 450 mV @ 2 A | |
|
|
CRS10I30C(TE85L,QMDIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage |
3,750 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 1A | 150°C (Max) | 360 mV @ 1 A | |
|
|
CRS15I30A(TE85L,QMDIODE SCHOTTKY 30V 1.5A S-FLAT Toshiba Semiconductor and Storage |
3,011 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 10V, 1MHz | - | 60 µA @ 30 V | 30 V | 1.5A | 150°C (Max) | 460 mV @ 1.5 A |
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