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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CRS03(TE85L,Q,M)DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage |
2,708 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 40pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 450 mV @ 1 A | |
|
CUS10S40,H3FDIODE SCHOTTKY 40V 1A USC Toshiba Semiconductor and Storage |
2,786 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 0V, 1MHz | - | 150 µA @ 40 V | 40 V | 1A | 125°C (Max) | 400 mV @ 500 mA | |
|
CUHS20F40,H3FSCHOTTKY BARRIER DIODE, 40V/2A, Toshiba Semiconductor and Storage |
2,813 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 0V, 1MHz | - | 60 µA @ 40 V | 40 V | 2A | 150°C (Max) | 540 mV @ 2 A | |
|
CMS03(TE12L,Q,M)DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage |
1,740 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
CMS15I40A(TE12L,QMDIODE SCHOTTKY 40V 1.5A M-FLAT Toshiba Semiconductor and Storage |
2,765 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 1.5A | 150°C (Max) | 490 mV @ 1.5 A | |
|
|
CMS30I30A(TE12L,QMDIODE SCHOTTKY 30V 3A M-FLAT Toshiba Semiconductor and Storage |
2,293 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 3A | 150°C (Max) | 490 mV @ 3 A | |
|
|
CMS10I30A(TE12L,QMDIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage |
2,820 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 1A | 150°C (Max) | 360 mV @ 1 A | |
|
|
CMS16(TE12L,Q,M)DIODE SCHOTTKY 40V 3A MFLAT Toshiba Semiconductor and Storage |
2,568 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A | -40°C ~ 150°C | 550 mV @ 3 A |
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