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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CUHS15S40,H3FSBD SINGLE 40V, 1.5A, IN 2 PIN U Toshiba Semiconductor and Storage |
5,990 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 200 µA @ 40 V | 40 V | 1.5A | 150°C | 510 mV @ 1.5 A | ||
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CRG01(TE85L,Q,M)DIODE GEN PURP 100V 700MA SFLAT Toshiba Semiconductor and Storage |
3,055 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 700mA | -40°C ~ 150°C | 1.1 V @ 700 mA | |
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CRG02(TE85L,Q,M)DIODE GEN PURP 400V 700MA SFLAT Toshiba Semiconductor and Storage |
3,836 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 1.1 V @ 700 mA | |
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CRG03(TE85L,Q,M)DIODE GEN PURP 400V 1A SFLAT Toshiba Semiconductor and Storage |
3,395 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1 V @ 1 A | |
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CUS01(TE85L,Q,M)DIODE SCHOTTKY 30V 1A USFLAT Toshiba Semiconductor and Storage |
3,969 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 390 mV @ 1 A | |
|
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CUS02(TE85L,Q,M)DIODE SCHOTTKY 30V 1A USFLAT Toshiba Semiconductor and Storage |
2,859 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 470 mV @ 1 A | |
|
CCS15F40,L3FDIODE SCHOTTKY 40V 1.5A CST2C Toshiba Semiconductor and Storage |
21,510 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 0V, 1MHz | - | 25 µA @ 40 V | 40 V | 1.5A | 150°C (Max) | 640 mV @ 1.5 A | |
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1SS422(TE85L,F)SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage |
22,648 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 15pF @ 0V, 1MHz | - | 50 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 500 mV @ 100 mA | |
|
1SS190TE85LFDIODE GEN PURP 80V 100MA SC59-3 Toshiba Semiconductor and Storage |
18,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 80 V | 100mA | 125°C (Max) | 1.2 V @ 100 mA | |
|
1SS372(TE85L,F)SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage |
5,167 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 20pF @ 0V, 1MHz | - | 20 µA @ 10 V | 10 V | 100mA | 125°C (Max) | 500 mV @ 100 mA | |
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CMS01(TE12L)DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage |
2,577 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 5 mA @ 30 V | 30 V | 3A | -40°C ~ 125°C | 370 mV @ 3 A | |
|
|
CMS02(TE12L)DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage |
3,613 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -40°C ~ 125°C | 400 mV @ 3 A | |
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CMS03(TE12L)DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage |
3,460 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -40°C ~ 150°C | 450 mV @ 3 A | |
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CMS04(TE12L)DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage |
3,214 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 8 mA @ 30 V | 30 V | 5A | -40°C ~ 125°C | 370 mV @ 5 A | |
|
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CMS09(TE12L)DIODE SCHOTTKY 30V 1A MFLAT Toshiba Semiconductor and Storage |
3,931 | - |
RFQ |
Scheda tecnica |
Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 450 mV @ 1 A | |
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CMS11(TE12L)DIODE SCHOTTKY 40V 2A MFLAT Toshiba Semiconductor and Storage |
3,753 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
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CRH01(TE85L)DIODE SWITCHING 200V 1A SFLAT Toshiba Semiconductor and Storage |
3,937 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
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CRS01(TE85L)DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage |
3,023 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 360 mV @ 1 A | |
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CRS04(TE85L)DIODE SCHOTTKY 40V 1A SFLAT Toshiba Semiconductor and Storage |
3,996 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -40°C ~ 150°C | 510 mV @ 1 A | |
|
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CRS08(TE85L)DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage |
2,713 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 1.5A | -40°C ~ 125°C | 360 mV @ 1.5 A |
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