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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WND08P16XQSTANDARD POWER DIODE WeEn Semiconductors |
4,374 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 1600 V | 1600 V | 8A | 150°C | 1.2 V @ 8 A | |
|
NXPSC066506QDIODE SCHOTTKY 650V 6A TO220AC WeEn Semiconductors |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
NXPSC06650X6QDIODE SCHOTTKY 650V 6A TO220F WeEn Semiconductors |
2,997 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
NXPSC10650B6JDIODE SCHOTTKY 650V 10A D2PAK WeEn Semiconductors |
3,190 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
NXPSC06650B6JDIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors |
3,190 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
WNSC12650WQSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
1,200 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 12A | 175°C | 1.7 V @ 12 A | |
|
|
NXPSC12650B6JSILICON CARBIDE POWER DIODE WeEn Semiconductors |
6,400 | - |
RFQ |
Cut Tape (CT),Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | ||
|
BYC405X-400PQDUAL HYPERFAST POWER DIODE WeEn Semiconductors |
4,098 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 400 V | 400 V | 10A | 150°C | 1.5 V @ 5 A | ||
|
|
WNSC2D101200WQSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 490pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C | 1.65 V @ 10 A | |
|
|
NXPSC086506QDIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
|
NXPSC08650X6QDIODE SCHOTTKY 650V 8A TO220F WeEn Semiconductors |
2,998 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
|
BYC75W-600PQDIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors |
3,099 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 75A | 175°C (Max) | 2.75 V @ 75 A | |
|
|
BYR16W-1200QDIODE GEN PURP 1.2KV 16A TO247-2 WeEn Semiconductors |
3,335 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 105 ns | 100 µA @ 1200 V | 1200 V | 16A | 175°C (Max) | 2.7 V @ 16 A | |
|
|
BYR29X-800PQDIODE GEN PURP 800V 8A TO220F WeEn Semiconductors |
3,469 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 10 µA @ 800 V | 800 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
|
BYV29X-600AQDIODE GEN PURP TO220F WeEn Semiconductors |
3,899 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
OB1002ZOB1002/UNCASED/NO MARK*CHIPS O WeEn Semiconductors |
2,854 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
OB2001/001VOB2001/001/UNCASED/NO MARK*CHI WeEn Semiconductors |
3,137 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
OB2004VOB2004/UNCASED/NO MARK*CHIPS O WeEn Semiconductors |
3,915 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
NXPSC08650D6JDIODE SCHOTTKY 650V 8A DPAK WeEn Semiconductors |
7,184 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
|
OB2005VOB2005/UNCASED/NO MARK*CHIPS O WeEn Semiconductors |
2,162 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
- 1500+ Media giornaliera RFQ
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