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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S8JC M6GDIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation |
3,139 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
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|
SRAS850HMNGDIODE SCHOTTKY 50V 8A TO263AB Taiwan Semiconductor Corporation |
2,299 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
|
ES1HL RTGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
3,429 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES2C M4GDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
S8JCHM6GDIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation |
2,457 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
|
|
SRAS860 MNGDIODE SCHOTTKY 60V 8A TO263AB Taiwan Semiconductor Corporation |
3,829 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
|
|
ES1JL MQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,639 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
ES2CA M2GDIODE GEN PURP 150V 2A DO214AC Taiwan Semiconductor Corporation |
3,520 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
S8KC M6GDIODE GEN PURP 800V 8A DO214AB Taiwan Semiconductor Corporation |
3,680 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
SRAS860HMNGDIODE SCHOTTKY 60V 8A TO263AB Taiwan Semiconductor Corporation |
3,843 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
|
|
ES1JL MTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,332 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES2CAHM2GDIODE GEN PURP 150V 2A DO214AC Taiwan Semiconductor Corporation |
2,144 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
S8KCHM6GDIODE GEN PURP 800V 8A DO214AB Taiwan Semiconductor Corporation |
2,724 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
|
|
SRAS890 MNGDIODE SCHOTTKY 90V 8A TO263AB Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
ES1JL RQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES2CHM4GDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
3,675 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
S8MC M6GDIODE GEN PURP 8A DO214AB Taiwan Semiconductor Corporation |
3,063 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
SRAS890HMNGDIODE SCHOTTKY 90V 8A TO263AB Taiwan Semiconductor Corporation |
2,290 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
ES1JL RTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,429 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES2HA M2GDIODE GEN PURP 500V 2A DO214AC Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
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