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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK53CHM6GDIODE SCHOTTKY 30V 5A DO214AB Taiwan Semiconductor Corporation |
3,669 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A |
|
ES1BL MTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,094 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1BL RQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1DL M2GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,820 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SK54C M6GDIODE SCHOTTKY 40V 5A DO214AB Taiwan Semiconductor Corporation |
3,744 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
|
|
ES1BL RQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,259 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1BL RTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,542 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1DL MHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,965 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SK54CHM6GDIODE SCHOTTKY 40V 5A DO214AB Taiwan Semiconductor Corporation |
2,272 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A |
|
|
ES1BL RTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,464 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1DL MQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,129 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1FL M2GDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
2,272 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SK55C M6GDIODE SCHOTTKY 50V 5A DO214AB Taiwan Semiconductor Corporation |
2,964 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | |
|
|
ES1BLHMQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,005 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1DL MTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,641 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1FL MHGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,139 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SK55CHM6GDIODE SCHOTTKY 50V 5A DO214AB Taiwan Semiconductor Corporation |
3,256 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A |
|
|
ES1BLHMTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,863 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1DL RQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,154 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1GL M2GDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,151 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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