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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK56C M6GDIODE SCHOTTKY 60V 5A DO214AB Taiwan Semiconductor Corporation |
2,387 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | |
|
ES1BLHRQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,482 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1DL RTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,795 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1GL MHGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,768 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SK56CHM6GDIODE SCHOTTKY 60V 5A DO214AB Taiwan Semiconductor Corporation |
3,150 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A |
|
|
ES1BLHRTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1FL MQGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
2,508 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1JL M2GDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,654 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SK59C M6GDIODE SCHOTTKY 90V 5A DO214AB Taiwan Semiconductor Corporation |
3,563 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
|
ES1CL MQGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,854 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1FL MTGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,338 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1JL MHGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,738 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SK59CHM6GDIODE SCHOTTKY 90V 5A DO214AB Taiwan Semiconductor Corporation |
2,839 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
|
|
ES1CL MTGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,982 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1FL RQGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,014 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1KL M2GDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
3,436 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SK810C M6GDIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation |
2,492 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 900 mV @ 8 A | |
|
|
ES1CL RQGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,153 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1FL RTGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,975 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1KL MHGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,161 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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