Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SJLW

SJLW

0.8A, 600V, STANDARD RECOVERY RE

Taiwan Semiconductor Corporation
3,671 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 800mA -55°C ~ 150°C 1.1 V @ 800 mA
SGLW

SGLW

0.8A, 400V, STANDARD RECOVERY RE

Taiwan Semiconductor Corporation
2,640 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 800mA -55°C ~ 150°C 1.1 V @ 800 mA
BAV21WS R9G

BAV21WS R9G

DIODE GEN PURP 250V 200MA SOD323

Taiwan Semiconductor Corporation
3,742 -

RFQ

BAV21WS R9G

Scheda tecnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 250 V 200mA -65°C ~ 150°C 1.25 V @ 200 mA
BAS70 RFG

BAS70 RFG

DIODE GEN PURP 70V 70MA SOT-23

Taiwan Semiconductor Corporation
2,206 -

RFQ

BAS70 RFG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz 5 ns 100 nA @ 50 V 70 V 70mA (DC) -55°C ~ 125°C 1 V @ 15 mA
SF64G B0G

SF64G B0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation
3,762 -

RFQ

SF64G B0G

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
FR155G B0G

FR155G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,284 -

RFQ

FR155G B0G

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2001GHC0G

SFAF2001GHC0G

DIODE GEN PURP 50V 20A ITO220AC

Taiwan Semiconductor Corporation
3,134 -

RFQ

SFAF2001GHC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1503HB0G

SR1503HB0G

DIODE SCHOTTKY 30V 15A R-6

Taiwan Semiconductor Corporation
3,818 -

RFQ

SR1503HB0G

Scheda tecnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 15A -50°C ~ 150°C 550 mV @ 15 A
ES3G M6G

ES3G M6G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation
3,688 -

RFQ

ES3G M6G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SK29AHM2G

SK29AHM2G

DIODE SCHOTTKY 90V 2A DO214AC

Taiwan Semiconductor Corporation
2,987 -

RFQ

SK29AHM2G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
SF64GHB0G

SF64GHB0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation
3,872 -

RFQ

SF64GHB0G

Scheda tecnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
FR155GHB0G

FR155GHB0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,397 -

RFQ

FR155GHB0G

Scheda tecnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002G C0G

SFAF2002G C0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation
2,369 -

RFQ

SFAF2002G C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504 B0G

SR1504 B0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation
2,656 -

RFQ

SR1504 B0G

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32A M2G

SK32A M2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation
2,173 -

RFQ

SK32A M2G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
SF65G B0G

SF65G B0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation
2,897 -

RFQ

SF65G B0G

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
FR156G B0G

FR156G B0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,966 -

RFQ

FR156G B0G

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002GHC0G

SFAF2002GHC0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation
3,138 -

RFQ

SFAF2002GHC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504HB0G

SR1504HB0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation
3,792 -

RFQ

SR1504HB0G

Scheda tecnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32AHM2G

SK32AHM2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation
3,545 -

RFQ

SK32AHM2G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
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1500+ Media giornaliera RFQ
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20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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