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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
F1T5G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
3,978 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
F1T1G A0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,645 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
S3B V7GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,904 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | - | |
|
|
F1T5GHA1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,218 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
F1T1GHA0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,016 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S4A V6GDIODE GEN PURP 50V 4A DO214AB Taiwan Semiconductor Corporation |
2,912 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | - | |
|
|
F1T6G A1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,386 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
F1T2G A0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,475 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S4B V6GDIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation |
2,272 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 100 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | - | |
|
|
F1T6GHA1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
2,541 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
F1T2GHA0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,489 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S5A V6GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
3,260 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | - | |
|
|
F1T7G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
2,467 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
F1T3G A0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,155 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S5B V6GDIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,970 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | - | |
|
|
F1T7GHA1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,787 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
S2GA M2GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,531 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
S2JA M2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,507 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
F1T3GHA0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,783 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SK52C V6GDIODE SCHOTTKY 5A 20V DO-214AB Taiwan Semiconductor Corporation |
3,635 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A |
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