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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HT16G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
3,284 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
ES2LDHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,530 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 940 mV @ 2 A |
|
|
ES2LGHM4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,967 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
SKL13BHM4GDIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 390 mV @ 1 A |
|
|
ES2LJHM4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,697 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
F1T6GHA0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,726 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SK82C V6GDIODE SCHOTTKY 8A 20V DO-214AB Taiwan Semiconductor Corporation |
3,938 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | - | |
|
|
HT17G A1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,420 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
F1T7G A0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
2,977 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SK82C V7GDIODE SCHOTTKY 8A 20V DO-214AB Taiwan Semiconductor Corporation |
2,995 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | - | |
|
|
HT18G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,819 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
F1T7GHA0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,151 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SK83C V7GDIODE SCHOTTKY 8A 30V DO-214AB Taiwan Semiconductor Corporation |
2,879 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | - | |
|
|
SFT11G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,993 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
FR151G A0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,374 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
SK84C V7GDIODE SCHOTTKY 8A 40V DO-214AB Taiwan Semiconductor Corporation |
2,138 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | - | |
|
|
SFT11GHA1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,133 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
S2BDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,529 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | ||
|
|
FR151GHA0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
SK85C V6GDIODE SCHOTTKY 8A 50V DO-214AB Taiwan Semiconductor Corporation |
2,722 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | - |
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