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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAV21RECTIFIER DIODE, 0.2A, 250V, DO- Rochester Electronics, LLC |
191,500 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
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|
STPSC2H12B2Y-TRAUTOMOTIVE 1200 V, 2 A HIGH SURG STMicroelectronics |
2,320 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 0V, 1MHz | - | 12 µA @ 1200 V | 1200 V | 5A | -40°C ~ 175°C | 1.5 V @ 2 A | |
|
PMEG3005EEFZPMEG3005EEF - 30 V, 0.5 A LOW VF Rochester Electronics, LLC |
168,150 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 17pF @ 1V, 1MHz | 2 ns | 15 µA @ 30 V | 30 V | 500mA | 150°C (Max) | 670 mV @ 500 mA | |
|
MUR820GDIODE GEN PURP 200V 8A TO220AC Rochester Electronics, LLC |
3,340 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
BAS40-04,215NEXPERIA BAS40-04 - RECTIFIER DI Rochester Electronics, LLC |
167,000 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
STTH30R02DJF-TRDIODE GP 200V 30A POWERFLAT STMicroelectronics |
3,739 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 200 V | 200 V | 30A | 175°C (Max) | 1.15 V @ 30 A | |
|
BAS21/MI,235BAS21 - HIGH-VOLTAGE SWITCHING D Rochester Electronics, LLC |
2,673 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
DMA10P1600UZ-TUBPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,619 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1pF @ 400V, 1MHz | - | 5 µA @ 1600 V | 1600 V | 10A | -55°C ~ 175°C | 1.55 V @ 10 A | |
|
|
ES 1FVDIODE GEN PURP 1.5KV 500MA AXIAL Sanken |
3,598 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1500 V | 1500 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
|
VS-12FR60DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
|
CD649SIGNAL/COMPUTER DIODE Microchip Technology |
3,872 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | - | 50 nA @ 600 V | 720 V | 400mA | -65°C ~ 175°C | 1 V @ 100 mA | ||
|
MBR8170TFSTWG170V 8A SCHOTTKY onsemi |
2,962 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 237pF @ 1V, 1MHz | - | 30 µA @ 170 V | 170 V | 8A (DC) | -55°C ~ 175°C | 890 mV @ 8 A | |
|
1N3611/TRSTD RECTIFIER Microchip Technology |
3,191 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
IDH05G65C5XKSA2DIODE SCHOTTKY 650V 5A TO220-2 Infineon Technologies |
3,069 | - |
RFQ |
Scheda tecnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 160pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
SBR12E45LH1-13DIODE SBR 45V 12A POWERDI5SP Diodes Incorporated |
3,773 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 300 µA @ 45 V | 45 V | 12A | -65°C ~ 150°C | 520 mV @ 12 A | |
|
FFSD1065A650V 10A SIC SBD onsemi |
3,659 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 575pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 18A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A | |
|
1N457SIGNAL/COMPUTER DIODE Microchip Technology |
2,977 | - |
RFQ |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 60 V | 60 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA | ||
|
MBR1090-M3/4WDIODE SCHOTTKY 90V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,906 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
1N5615/TRRECTIFIER UFR,FRR Microchip Technology |
2,601 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 12V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
|
LSM835G/TR13DIODE SCHOTTKY 35V 8A DO215AB Microchip Technology |
3,286 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 8A | -55°C ~ 150°C | 520 mV @ 8 A |
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