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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-12TQ035-M3DIODE SCHOTTKY 15A 35V TO-220AC Vishay General Semiconductor - Diodes Division |
2,059 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 710 mV @ 30 A | |
|
JAN1N5616US/TRSTD RECTIFIER Microchip Technology |
3,906 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
VF20120SG-E3/4WDIODE SCHOTTKY 120V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
3,352 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
VS-6F40DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,042 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
GC08MPS12-220SIC DIODE 1200V 8A TO-220-2 GeneSiC Semiconductor |
3,155 | - |
RFQ |
Scheda tecnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 545pF @ 1V, 1MHz | 0 ns | 7 µA @ 1200 V | 1200 V | 43A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A |
|
RFUH20TF6SC9FAST RECOVERY DIODE : ROHM'S FAS Rohm Semiconductor |
2,649 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 20A | 150°C | 2.8 V @ 20 A | ||
|
|
VS-12TQ040-M3DIODE SCHOTTKY 40V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,778 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 710 mV @ 30 A | |
|
JANTX1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
2,944 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
VIT2060G-M3/4WDIODE SCHOTTKY 60V 10A TO262AA Vishay General Semiconductor - Diodes Division |
3,385 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 900 mV @ 10 A | |
|
|
VS-12FL10S02DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
CDLL0.5A40/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,316 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
|
HSM5100G/TR13DIODE SCHOTTKY 100V 5A DO215AB Microchip Technology |
3,298 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
|
CDBHA20120-HFDIODE SCHOTTKY 120V 20A TO-277B Comchip Technology |
3,543 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 20A | -55°C ~ 150°C | 850 mV @ 20 A | |
|
1N5623USDIODE GEN PURP 1KV 1A D5A Microchip Technology |
3,819 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 12V, 1MHz | 500 ns | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
|
DSA15IM150UC-TRLDIODE SCHOTTKY 150V 15A TO252 IXYS |
2,469 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VS-30EPH06HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,885 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 31 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
|
VS-6FR40DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,020 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
|
HSM580G/TR13DIODE SCHOTTKY 80V 5A DO215AB Microchip Technology |
2,444 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 80 V | 80 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
VS-8ETU04STRL-M3DIODE GEN PURP 400V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,162 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
|
VS-95PF40TDIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A |
- 1500+ Media giornaliera RFQ
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