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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT15DQ60SGFRED DQ 600 V 15 A TO-268 Microchip Technology |
2,806 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 21 ns | 25 µA @ 600 V | - | 15A | -55°C ~ 175°C | 2.4 V @ 15 A | |
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|
HSM835J/TR13DIODE SCHOTTKY 35V 8A DO214AB Microchip Technology |
3,102 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 35 V | 35 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
RN 4ZDIODE GEN PURP 200V 3.5A AXIAL Sanken |
2,460 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 50 µA @ 200 V | 200 V | 3.5A | -40°C ~ 150°C | 920 mV @ 3.5 A | |
|
JAN1N5802DIODE GEN PURP 50V 2.5A AXIAL Microchip Technology |
3,089 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 2.5A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
BYV98-200-TAPDIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division |
2,138 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
STPSC20065CWLDFD THYR TRIAC & RECTIFIER STMicroelectronics |
3,427 | - |
RFQ |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 670pF @ 0V, 1MHz | 0 ns | 130 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.45 V @ 10 A | |
|
CDLL485BDIODE GEN PURP 180V 200MA DO213 Microchip Technology |
2,717 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 180 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
HSM840J/TR13DIODE SCHOTTKY 40V 8A DO214AB Microchip Technology |
3,308 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
1N5408-E3/73DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
UPR60/TR13DIODE GEN PURP 600V 2A POWERMITE Microchip Technology |
2,004 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A | |
|
|
BYW178-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,864 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 60 ns | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.9 V @ 3 A | |
|
JANTX1N4246DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
2,309 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
CDLL0.5A20DIODE SCHOTTKY 20V 500MA DO213AA Microchip Technology |
2,953 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 20 V | 20 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
|
MBR60150PTE3/TUDIODE SCHOTTKY 60A 150V TO-247AD Microchip Technology |
3,839 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N5401-E3/73DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,334 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
UPR60/TR7DIODE GEN PURP 600V 2A POWERMITE Microchip Technology |
2,152 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A | |
|
|
SF5406-TAPDIODE GEN PURP 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,761 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
JAN1N3613/TRSTD RECTIFIER Microchip Technology |
2,347 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 300 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
2,454 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
MBR60200PTE3/TUDIODE SCHOTTKY 60A 200V TO-247AD Microchip Technology |
3,228 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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