Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF5406-TR

SF5406-TR

DIODE GEN PURP 600V 3A SOD64

Vishay General Semiconductor - Diodes Division
3,036 -

RFQ

SF5406-TR

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.7 V @ 3 A
JAN1N3614/TR

JAN1N3614/TR

STD RECTIFIER

Microchip Technology
3,679 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
CDLL0.2A30/TR

CDLL0.2A30/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
3,284 -

RFQ

CDLL0.2A30/TR

Scheda tecnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 30 V 30 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
MBR6045PTE3/TU

MBR6045PTE3/TU

DIODE SCHOTTKY 60A 45V TO-247AD

Microchip Technology
3,385 -

RFQ

Tube RoHS - - Active - - - - - - - -
FES8HT-E3/45

FES8HT-E3/45

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,074 -

RFQ

FES8HT-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.5 V @ 8 A
JAN1N5553

JAN1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology
3,215 -

RFQ

JAN1N5553

Scheda tecnica

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.3 V @ 9 A
SF5407-TR

SF5407-TR

DIODE GEN PURP 800V 3A SOD64

Vishay General Semiconductor - Diodes Division
2,853 -

RFQ

SF5407-TR

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 800 V 800 V 3A -55°C ~ 175°C 1.7 V @ 3 A
1N4942C.TR

1N4942C.TR

DIODE GEN PURP 200V 1A AXIAL

Semtech Corporation
2,621 -

RFQ

1N4942C.TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 5V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A - 1.2 V @ 1 A
CDLL0.2A20/TR

CDLL0.2A20/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
2,544 -

RFQ

CDLL0.2A20/TR

Scheda tecnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 20 V 20 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
MBR6050PTE3/TU

MBR6050PTE3/TU

DIODE SCHOTTKY 60A 50V TO-247AD

Microchip Technology
2,858 -

RFQ

Tube RoHS - - Active - - - - - - - -
VI10150S-M3/4W

VI10150S-M3/4W

DIODE SCHOTTKY 10A 150V TO-262AA

Vishay General Semiconductor - Diodes Division
2,659 -

RFQ

VI10150S-M3/4W

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 10A -40°C ~ 150°C 1.2 V @ 10 A
JAN1N5554

JAN1N5554

DIODE GEN PURP 1KV 3A AXIAL

Microchip Technology
2,719 -

RFQ

JAN1N5554

Scheda tecnica

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 1000 V 1000 V 3A -65°C ~ 175°C 1.3 V @ 9 A
VS-15ETH06-1-M3

VS-15ETH06-1-M3

DIODE GEN PURP 600V 15A TO262AA

Vishay General Semiconductor - Diodes Division
3,621 -

RFQ

VS-15ETH06-1-M3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 50 µA @ 600 V 600 V 15A -65°C ~ 175°C 2.2 V @ 15 A
1N5417C.TR

1N5417C.TR

DIODE GEN PURP 200V 4.5A AXIAL

Semtech Corporation
3,945 -

RFQ

1N5417C.TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 250pF @ 4V, 1MHz 150 ns 1 µA @ 200 V 200 V 4.5A - 1.1 V @ 3 A
CDLL0.5A30/TR

CDLL0.5A30/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
2,865 -

RFQ

CDLL0.5A30/TR

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 10 µA @ 30 V 30 V 500mA -65°C ~ 125°C 650 mV @ 500 mA
MBR6060PTE3/TU

MBR6060PTE3/TU

DIODE SCHOTTKY 60A 60V TO-247AD

Microchip Technology
2,489 -

RFQ

Tube RoHS - - Active - - - - - - - -
S8MC V7G

S8MC V7G

DIODE GEN PURP 1KV 8A DO214AB

Taiwan Semiconductor Corporation
2,619 -

RFQ

S8MC V7G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 8A -55°C ~ 150°C 985 mV @ 8 A
VS-1N1184

VS-1N1184

DIODE GEN PURP 100V 35A DO203AB

Vishay General Semiconductor - Diodes Division
3,849 -

RFQ

VS-1N1184

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 100 V 100 V 35A -65°C ~ 190°C 1.7 V @ 110 A
VS-15ETL06-1-M3

VS-15ETL06-1-M3

DIODE HYPERFAST 600V 15A TO262

Vishay General Semiconductor - Diodes Division
3,780 -

RFQ

VS-15ETL06-1-M3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 270 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
1N5418C.TR

1N5418C.TR

DIODE GEN PURP 400V 4.5A AXIAL

Semtech Corporation
3,354 -

RFQ

1N5418C.TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 165pF @ 4V, 1MHz 150 ns 1 µA @ 400 V 400 V 4.5A - 1.1 V @ 3 A
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1500+ Media giornaliera RFQ
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