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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SBR0560S1Q-7 DIODE SBR 60V 500MA SOD123 Diodes Incorporated	2,419	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Super Barrier	Active	Surface Mount	-	-	100 µA @ 60 V	60 V	500mA	-65°C ~ 150°C	500 mV @ 500 mA
SS10150HE_R1_00001 SOD-123HE, SKY Panjit International Inc.	2,968	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	85pF @ 0V, 1MHz	-	30 µA @ 150 V	150 V	1A	-55°C ~ 150°C	850 mV @ 1 A
VB20120SG-E3/4W DIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division	3,963	-	RFQ	Scheda tecnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 120 V	120 V	20A	-40°C ~ 150°C	1.33 V @ 20 A
1N5622C.TR DIODE GEN PURP 1KV 1A AXIAL Semtech Corporation	2,968	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	23pF @ 5V, 1MHz	2 µs	500 nA @ 1000 V	1000 V	2A	-65°C ~ 175°C	1.1 V @ 1 A
JAN1N914UR ZENER DIODE Microchip Technology	2,953	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/116	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	4pF @ 0V, 1MHz	20 ns	500 nA @ 75 V	75 V	200mA	-65°C ~ 175°C	1.2 V @ 50 mA
FFSP1065B-F085 SIC DIODE 650V onsemi	3,862	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	421pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	10A	-55°C ~ 175°C	1.7 V @ 10 A
VS-8TQ060-M3 DIODE GEN PURP 60V 8A TO220AC Vishay General Semiconductor - Diodes Division	2,451	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	500pF @ 5V, 1MHz	-	550 µA @ 60 V	60 V	8A	-55°C ~ 175°C	880 mV @ 16 A
1N5187/TR RECTIFIER UFR,FRR Microchip Technology	2,670	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	2 µA @ 200 V	200 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
VF30100SG-M3/4W DIODE SCHOTTKY 30A 100V ITO220AB Vishay General Semiconductor - Diodes Division	3,994	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	1 mA @ 100 V	100 V	30A	-40°C ~ 150°C	910 mV @ 30 A
1N5620C.TR DIODE GEN PURP 800V 1A AXIAL Semtech Corporation	3,960	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	23pF @ 5V, 1MHz	2 µs	500 nA @ 800 V	800 V	2A	-65°C ~ 175°C	1.1 V @ 1 A
JAN1N4245 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	3,818	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/286	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	1 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.3 V @ 3 A
VS-HFA16TB120SL-M3 DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division	3,211	-	RFQ	Scheda tecnica	Tape & Reel (TR)	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	135 ns	20 µA @ 1200 V	1200 V	16A (DC)	-55°C ~ 150°C	3.93 V @ 32 A
VS-8TQ080-M3 DIODE SCHOTTKY 80V 8A TO220AC Vishay General Semiconductor - Diodes Division	2,599	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	500pF @ 5V, 1MHz	-	550 µA @ 80 V	80 V	8A	-55°C ~ 175°C	880 mV @ 16 A
1N5195UR/TR SIGNAL/COMPUTER DIODE Microchip Technology	3,362	-	RFQ		Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	-	25 nA @ 180 V	180 V	200mA	-65°C ~ 175°C	1 V @ 100 mA
GP30A-E3/54 DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division	3,013	-	RFQ	Scheda tecnica	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	5 µA @ 50 V	50 V	3A	-65°C ~ 175°C	1.2 V @ 3 A
1N5616C.TR DIODE GEN PURP 400V 1A AXIAL Semtech Corporation	2,980	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	23pF @ 5V, 1MHz	2 µs	500 nA @ 400 V	400 V	2A	-65°C ~ 175°C	1.1 V @ 1 A
DSEP29-06B DIODE GEN PURP 600V 30A TO220AC IXYS	3,673	-	RFQ	Scheda tecnica	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2.52 V @ 30 A
VS-HFA16TB120SR-M3 DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division	3,859	-	RFQ	Scheda tecnica	Tape & Reel (TR)	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	135 ns	20 µA @ 1200 V	1200 V	16A (DC)	-55°C ~ 150°C	3.93 V @ 32 A
ES 1FV0 DIODE GEN PURP 1.5KV 500MA AXIAL Sanken	2,357	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1500 V	1500 V	500mA	-40°C ~ 150°C	2 V @ 500 mA
1N5189/TR RECTIFIER UFR,FRR Microchip Technology	2,208	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	2 µA @ 500 V	500 V	3A	-65°C ~ 175°C	1.5 V @ 9 A