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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TTC011B,QPB-FPOWERTRANSISTORTO-126NPC=10W Toshiba Semiconductor and Storage |
3,305 | - |
RFQ |
Scheda tecnica |
Tray | - | Active | NPN | 1 A | 230 V | 1.5V @ 50mA, 500mA | 200nA (ICBO) | 100 @ 100mA, 5V | 1.5 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
TTA006B,QPB-F POWER TRANSISTOR TO-126N PC Toshiba Semiconductor and Storage |
3,304 | - |
RFQ |
Scheda tecnica |
Tray | - | Active | PNP | 1 A | 230 V | 1.5V @ 50mA, 500mA | 200nA (ICBO) | 100 @ 100mA, 5V | 1.5 W | 70MHz | 150°C (TJ) | Through Hole |
|
|
TTD1409B,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,905 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | NPN - Darlington | 6 A | 400 V | 2V @ 40mA, 4A | 20µA (ICBO) | 600 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
TTA1452B,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,527 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | PNP | 12 A | 80 V | 400mV @ 300mA, 6A | 5µA (ICBO) | 120 @ 1A, 1V | 2 W | 50MHz | 150°C (TJ) | Through Hole |
|
2SA1162-O,LFTRANS PNP 50V 0.15A SMINI Toshiba Semiconductor and Storage |
2,476 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
2SA1832-GR,LFTRANS PNP 50V 0.15A SSM Toshiba Semiconductor and Storage |
2,357 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
|
2SA1832-Y,LFTRANS PNP 50V 0.15A SSM Toshiba Semiconductor and Storage |
2,606 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
|
2SC2712-BL,LFTRANS NPN 50V 0.15A SMINI Toshiba Semiconductor and Storage |
3,853 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN | 150 mA | 50 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 150 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
|
2SC4116-O(TE85L,F)TRANS NPN 50V 0.15A SC70 Toshiba Semiconductor and Storage |
2,222 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | NPN | 150 mA | 50 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 100 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
2SA1588-O,LFTRANS PNP 30V 0.5A SC70 Toshiba Semiconductor and Storage |
2,957 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Active | PNP | 500 mA | 30 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 100 mW | 200MHz | 125°C (TJ) | Surface Mount |
|
|
TTA1713-GR,LFTRANS PNP 45V 0.5A SMINI Toshiba Semiconductor and Storage |
3,803 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 500 mA | 45 V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 180 @ 100mA, 1V | 200 mW | 80MHz | 150°C (TJ) | Surface Mount |
|
|
2SA1313-O(TE85L,F)TRANS PNP 50V 0.5A SMINI Toshiba Semiconductor and Storage |
2,525 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | PNP | 500 mA | 50 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 200 mW | 200MHz | 150°C (TJ) | Surface Mount |
|
|
2SA1312GRTE85LFTRANS PNP 120V 0.1A SMINI Toshiba Semiconductor and Storage |
2,526 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 100 mA | 120 V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150 mW | 100MHz | 125°C (TJ) | Surface Mount |
|
|
2SC4213-A(TE85L,F)TRANS NPN 20V 0.3A SC70 Toshiba Semiconductor and Storage |
3,811 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | NPN | 300 mA | 20 V | 100mV @ 3mA, 30A | 100nA (ICBO) | 200 @ 4mA, 2V | 100 mW | 30MHz | 125°C (TJ) | Surface Mount |
|
|
2SA1721OTE85LFTRANS PNP 300V 0.1A SMINI Toshiba Semiconductor and Storage |
2,031 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | PNP | 100 mA | 300 V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 20mA, 10V | 150 mW | 50MHz | 150°C (TJ) | Surface Mount |
|
|
2SA2056(TE85L,F)TRANS PNP 50V 2A TSM Toshiba Semiconductor and Storage |
3,410 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Active | PNP | 2 A | 50 V | 200mV @ 33mA, 1A | 100nA (ICBO) | 200 @ 300mA, 2V | 625 mW | - | 150°C (TJ) | Surface Mount |
|
|
2SA2061(TE85L,F)PB-F POWER TRANSISTOR TSM MOQ=30 Toshiba Semiconductor and Storage |
3,004 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP | 2.5 A | 20 V | 190mV @ 53mA, 1.6A | 100nA (ICBO) | 200 @ 500mA, 2V | 625 mW | - | 150°C (TJ) | Surface Mount |
|
|
2SC2873-Y(TE12L,ZCPB-F POWER TRANSISTOR PW-MINI MO Toshiba Semiconductor and Storage |
3,416 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 100nA (ICBO) | 70 @ 500mA, 2V | 500 mW | 120MHz | 150°C (TJ) | Surface Mount |
|
2SC5712(TE12L,F)TRANS NPN 50V 3A PW-MINI Toshiba Semiconductor and Storage |
3,561 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Active | NPN | 3 A | 50 V | 140mV @ 20mA, 1A | 100nA (ICBO) | 400 @ 300mA, 2V | 1 W | - | 150°C (TJ) | Surface Mount |
|
|
2SC2881-Y(TE12L,ZCPB-F POWER TRANSISTOR PW-MINI PC Toshiba Semiconductor and Storage |
2,696 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 120 @ 100mA, 5V | 500 mW | 120MHz | 150°C (TJ) | Surface Mount |
- 1500+ Media giornaliera RFQ
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