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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SA1987-O(Q)TRANS PNP 230V 15A TO3P Toshiba Semiconductor and Storage |
3,457 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | PNP | 15 A | 230 V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 180 W | 30MHz | 150°C (TJ) | Through Hole |
|
2SC5200-O(S1,FPB-F POWER TRANSISTOR TO-3PL PC= Toshiba Semiconductor and Storage |
3,699 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | NPN | 15 A | 230 V | 3V @ 800mA, 8A | 5µA (ICBO) | 55 @ 1A, 5V | 150 W | 30MHz | 150°C (TJ) | Through Hole |
|
|
TTA0002(Q)TRANS PNP 160V 18A TO3P Toshiba Semiconductor and Storage |
2,125 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | PNP | 18 A | 160 V | 2V @ 900mA, 9A | 1µA (ICBO) | 80 @ 1A, 5V | 180 W | 30MHz | 150°C (TJ) | Through Hole |
|
2SA1837(F,M)TRANS PNP 230V 1A TO220NIS Toshiba Semiconductor and Storage |
3,324 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 1 A | 230 V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2 W | 70MHz | 150°C (TJ) | Through Hole |
|
2SA1962-O(Q)TRANS PNP 230V 15A TO3P Toshiba Semiconductor and Storage |
3,816 | - |
RFQ |
Scheda tecnica |
Tray | - | Active | PNP | 15 A | 230 V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 130 W | 30MHz | 150°C (TJ) | Through Hole |
|
|
2SC4793(F,M)TRANS NPN 230V 1A TO220NIS Toshiba Semiconductor and Storage |
3,108 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 1 A | 230 V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2 W | 100MHz | 150°C (TJ) | Through Hole |
|
2SA1162S-Y, LF(DTRANS PNP 50V 0.15A SMINI Toshiba Semiconductor and Storage |
2,649 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 150 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
|
2SC2859-GR(TE85L,FTRANS NPN 30V 0.5A SMINI Toshiba Semiconductor and Storage |
2,404 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | NPN | 500 mA | 30 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 100mA, 1V | 150 mW | 300MHz | 125°C (TJ) | Surface Mount |
|
|
2SC2859-O(TE85L,F)TRANS NPN 30V 0.5A SMINI Toshiba Semiconductor and Storage |
3,583 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | NPN | 500 mA | 30 V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 150 mW | 300MHz | 125°C (TJ) | Surface Mount |
|
2SA1954-A(TE85L,F)TRANS PNP 12V 0.5A SC70 Toshiba Semiconductor and Storage |
2,705 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | PNP | 500 mA | 12 V | 250mV @ 10mA, 200mA | 100nA (ICBO) | 300 @ 10mA, 2V | 100 mW | 130MHz | 125°C (TJ) | Surface Mount |
|
|
2SA1162S-GR,LF(DTRANS PNP 50V 0.15A SMINI Toshiba Semiconductor and Storage |
3,298 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Obsolete | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 150 mW | 80MHz | 125°C (TJ) | Surface Mount |
|
|
2SA1869-Y,MTSAQ(JTRANS PNP 50V 3A TO220NIS Toshiba Semiconductor and Storage |
3,878 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 3 A | 50 V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1869-Y,Q(JTRANS PNP 50V 3A TO220NIS Toshiba Semiconductor and Storage |
3,792 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 3 A | 50 V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1930(LBS2MATQ,MTRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,324 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
|
2SA1930(ONK,Q,M)TRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,244 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
|
2SA1930,CKQ(JTRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage |
2,247 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
|
2SB1495,Q(MTRANS PNP 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,505 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
2SC1627A-O,PASF(MTRANS NPN 80V 0.4A TO92MOD Toshiba Semiconductor and Storage |
2,785 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 400 mA | 80 V | 400mV @ 20mA, 200A | 100nA (ICBO) | 70 @ 50mA, 2V | 800 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC1627A-Y,PASF(MTRANS NPN 80V 0.4A TO92MOD Toshiba Semiconductor and Storage |
3,407 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 400 mA | 80 V | 400mV @ 20mA, 200A | 100nA (ICBO) | 70 @ 50mA, 2V | 800 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC2229(TE6SAN1F,MTRANS NPN 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,683 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 150 V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
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