+86 075582561136
Carica BOM
Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC2235-Y(T6CANOFMTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,315 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6CN,A,FTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,479 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
KSD882YSTSTUTRANS NPN 30V 3A TO126-3 onsemi |
2,782 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 3 A | 30 V | 500mV @ 200mA, 2A | 1µA (ICBO) | 160 @ 1A, 2V | 1 W | 90MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
KSD882OSTRANS NPN 30V 3A TO126-3 onsemi |
3,975 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 30 V | 500mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 2V | 1 W | 90MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
KSA1381ESTSTUTRANS PNP 300V 0.1A TO126-3 onsemi |
3,532 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 100 mA | 300 V | 600mV @ 2mA, 20mA | 100nA (ICBO) | 100 @ 10mA, 10V | 7 W | 150MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6FJT,AFTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,452 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6FJT,FMTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,821 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
KSD882YSTSSTUTRANS NPN 30V 3A TO126-3 onsemi |
3,735 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 3 A | 30 V | 500mV @ 200mA, 2A | 1µA (ICBO) | 160 @ 1A, 2V | 1 W | 90MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6KMATFMTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,749 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
TN6717ATRANS NPN 80V 1.2A TO226-3 onsemi |
2,078 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.2 A | 80 V | 350mV @ 10mA, 250mA | 100nA (ICBO) | 50 @ 250mA, 1V | 1 W | - | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6ND,AFTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,284 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y(T6OMI,FMTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,173 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
TN6714ATRANS NPN 30V 2A TO226-3 onsemi |
3,187 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 30 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | 1 W | - | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC2235-Y,F(JTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,014 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y,T6ASHF(JTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,548 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
,TO-226_straightlead.jpg)
|
FJN13003BUTRANS NPN 400V 1.5A TO92-3 onsemi |
3,699 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | - | 9 @ 500mA, 2V | 1.1 W | 4MHz | 150°C (TJ) | Through Hole |
|
FPN430ATRANS PNP 30V 2A TO226 onsemi |
2,935 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 30 V | 450mV @ 100mA, 1A | 100nA (ICBO) | 250 @ 100mA, 2V | 1 W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC2235-Y,T6F(JTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,701 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y,T6KEHF(MTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,858 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC2235-Y,T6USNF(MTRANS NPN 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
3,190 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
