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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC2655-Y,T6WNLF(JTRANS NPN 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,143 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
KSC2690AYSTSTUTRANS NPN 160V 1.2A TO126-3 onsemi |
3,401 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 1.2 A | 160 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 160 @ 300mA, 5V | 1.2 W | 155MHz | 150°C (TJ) | Through Hole |
|
|
2SC2655-Y,WNLF(JTRANS NPN 50V 2A TO92MOD Toshiba Semiconductor and Storage |
2,702 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSB744YSTUTRANS PNP 45V 3A TO126-3 onsemi |
3,177 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 3 A | 45 V | 2V @ 150mA, 1.5A | 1µA (ICBO) | 160 @ 500mA, 5V | 1 W | 45MHz | 150°C (TJ) | Through Hole |
|
|
2SC3225,T6ALPSF(MTRANS NPN 40V 2A TO92MOD Toshiba Semiconductor and Storage |
2,081 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 40 V | 500mV @ 1mA, 300mA | 10µA (ICBO) | 500 @ 400mA, 1V | 900 mW | 220MHz | 150°C (TJ) | Through Hole |
|
|
2SC3328-O,T6KEHF(MTRANS NPN 80V 2A TO92MOD Toshiba Semiconductor and Storage |
2,299 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSC2690AOSTSTUTRANS NPN 160V 1.2A TO126-3 onsemi |
3,684 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 1.2 A | 160 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 100 @ 300mA, 5V | 1.2 W | 155MHz | 150°C (TJ) | Through Hole |
|
|
2SC3328-Y,HOF(MTRANS NPN 80V 2A TO92MOD Toshiba Semiconductor and Storage |
3,251 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3328-Y,T6CKF(JTRANS NPN 80V 2A TO92MOD Toshiba Semiconductor and Storage |
3,359 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSE340STRANS NPN 300V 0.5A TO126-3 onsemi |
2,890 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 500 mA | 300 V | - | 100µA (ICBO) | 30 @ 50mA, 10V | 20 W | - | 150°C (TJ) | Through Hole |
|
2SC3665-Y(T2NSW,FMTRANS NPN 120V 0.8A MSTM Toshiba Semiconductor and Storage |
3,042 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1 W | 120MHz | 150°C (TJ) | Through Hole |
|
KSA1220YSTUTRANS PNP 120V 1.2A TO126 onsemi |
3,395 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 1.2 A | 120 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 160 @ 300mA, 5V | 1.2 W | 175MHz | 150°C (TJ) | Through Hole |
|
|
2SC3665-Y,T2F(JTRANS NPN 120V 0.8A MSTM Toshiba Semiconductor and Storage |
3,135 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1 W | 120MHz | 150°C (TJ) | Through Hole |
|
|
KSB744AYSTUTRANS PNP 60V 3A TO126-3 onsemi |
2,307 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 3 A | 60 V | 2V @ 150mA, 1.5A | 1µA (ICBO) | 160 @ 500mA, 5V | 1 W | 45MHz | 150°C (TJ) | Through Hole |
|
|
KSC2690AOSTRANS NPN 160V 1.2A TO126-3 onsemi |
3,348 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.2 A | 160 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 100 @ 300mA, 5V | 1.2 W | 155MHz | 150°C (TJ) | Through Hole |
|
|
KSA1220AOSTRANS PNP 160V 1.2A TO126 onsemi |
3,822 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 1.2 A | 160 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 100 @ 300mA, 5V | 1.2 W | 175MHz | 150°C (TJ) | Through Hole |
|
|
KSE340STSTUTRANS NPN 300V 0.5A TO126-3 onsemi |
3,064 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 500 mA | 300 V | - | 100µA (ICBO) | 30 @ 50mA, 10V | 20 W | - | 150°C (TJ) | Through Hole |
|
|
KSD986YSTRANS NPN DARL 80V 1.5A TO126-3 onsemi |
3,854 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN - Darlington | 1.5 A | 80 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 8000 @ 1A, 2V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
KSE350STRANS PNP 300V 0.5A TO126-3 onsemi |
2,076 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 500 mA | 300 V | - | 100µA (ICBO) | 30 @ 50mA, 10V | 20 W | - | 150°C (TJ) | Through Hole |
|
|
KSD986YSTSSTUTRANS NPN DARL 80V 1.5A TO126-3 onsemi |
2,821 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN - Darlington | 1.5 A | 80 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 8000 @ 1A, 2V | 1 W | - | 150°C (TJ) | Through Hole |
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