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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KSD794YSTUTRANS NPN 45V 3A TO126-3 onsemi |
3,035 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 3 A | 45 V | 2V @ 150mA, 1.5A | 1µA (ICBO) | 160 @ 500mA, 5V | 1 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
KSB795OSTUTRANS PNP DARL 80V 1.5A TO126-3 onsemi |
3,116 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 1.5 A | 80 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 4000 @ 1A, 2V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
KSB794OSTUTRANS PNP DARL 60V 1.5A TO126-3 onsemi |
2,475 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 1.5 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 4000 @ 1A, 2V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
KSB1149YSTRANS PNP DARL 100V 3A TO126-3 onsemi |
3,028 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP - Darlington | 3 A | 100 V | 1.2V @ 1.5mA, 1.5A | 10µA (ICBO) | 4000 @ 1.5A, 2V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
|
KSE701STUTRANS PNP DARL 60V 4A TO126-3 onsemi |
3,713 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 4 A | 60 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
KSE700STRANS PNP DARL 60V 4A TO126-3 onsemi |
3,480 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
KSB1149YSTUTRANS PNP DARL 100V 3A TO126-3 onsemi |
2,263 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 3 A | 100 V | 1.2V @ 1.5mA, 1.5A | 10µA (ICBO) | 4000 @ 1.5A, 2V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
|
KSB1149OSTRANS PNP DARL 100V 3A TO126-3 onsemi |
2,875 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP - Darlington | 3 A | 100 V | 1.2V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 1.5A, 2V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
|
KSE700STUTRANS PNP DARL 60V 4A TO126-3 onsemi |
3,584 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
2SC4793,YHF(MTRANS NPN 230V 1A TO220NIS Toshiba Semiconductor and Storage |
3,535 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 230 V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSD986OSTRANS NPN DARL 80V 1.5A TO126-3 onsemi |
3,297 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN - Darlington | 1.5 A | 80 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 4000 @ 1A, 2V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
KSB1149OSTUTRANS PNP DARL 100V 3A TO126-3 onsemi |
3,734 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 3 A | 100 V | 1.2V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 1.5A, 2V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
FMBM5401-SB74001TRANS PNP 150V 0.6A SUPERSOT-6 onsemi |
2,778 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Obsolete | PNP | 600 mA | 150 V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 700 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
KSD1691OSTRANS NPN 60V 5A TO126-3 onsemi |
2,686 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 5 A | 60 V | 300mV @ 200mA, 2A | 10µA (ICBO) | 100 @ 2A, 1V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
|
2SC4881(CANO,F,M)TRANS NPN 50V 5A TO220NIS Toshiba Semiconductor and Storage |
3,603 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 5 A | 50 V | 400mV @ 125mA, 2.5A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 100MHz | 150°C (TJ) | Through Hole |
|
KSC3073OTUTRANS NPN 30V 3A IPAK onsemi |
3,098 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 3 A | 30 V | 800mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC4881,LS1SUMIF(MTRANS NPN 50V 5A TO220NIS Toshiba Semiconductor and Storage |
3,410 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 5 A | 50 V | 400mV @ 125mA, 2.5A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
KSE703STRANS PNP DARL 80V 4A TO126-3 onsemi |
3,433 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP - Darlington | 4 A | 80 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SC4935-Y,Q(JTRANS NPN 50V 3A TO220NIS Toshiba Semiconductor and Storage |
2,239 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 50 V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 2 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
2SC5171(LBS2MATQ,MTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
2,967 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
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