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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC5549,T6F(JTRANS NPN 400V 1A TO92MOD Toshiba Semiconductor and Storage |
3,810 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 400 V | 1V @ 25mA, 200mA | 100µA (ICBO) | 20 @ 40mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
2SC5930(T2MITUM,FMTRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,734 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 40 @ 200mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC5930(TPF2,F,M)TRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,239 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 40 @ 200mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6010(T2MITUM,FMTRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,992 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6040(TPF2,Q,M)TRANS NPN 800V 1A MSTM Toshiba Semiconductor and Storage |
2,242 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 800 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 60 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6040,T2Q(JTRANS NPN 800V 1A MSTM Toshiba Semiconductor and Storage |
2,235 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 800 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 60 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6042,T2HOSH1Q(JTRANS NPN 375V 1A MSTM Toshiba Semiconductor and Storage |
2,450 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 375 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6042,T2WNLQ(JTRANS NPN 375V 1A MSTM Toshiba Semiconductor and Storage |
3,545 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1 A | 375 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
|
|
2SC6139,T2F(MTRANS NPN 160V 1.5A MSTM Toshiba Semiconductor and Storage |
2,373 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.5 A | 160 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 140 @ 100mA, 5V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
2SD2129,ALPSQ(MTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,229 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 2V @ 12mA, 3A | 100µA (ICBO) | 2000 @ 1.5A, 3V | 2 W | - | 150°C (TJ) | Through Hole |
|
MJE701STUTRANS PNP DARL 60V 4A TO126-3 onsemi |
3,956 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 4 A | 60 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2129,LS4ALPSQ(MTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,029 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 2V @ 12mA, 3A | 100µA (ICBO) | 2000 @ 1.5A, 3V | 2 W | - | 150°C (TJ) | Through Hole |
|
2SD2206(T6CANO,F,MTRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
3,457 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
MJE801STUTRANS NPN DARL 60V 4A TO126-3 onsemi |
3,150 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 60 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
MJE803STUTRANS NPN DARL 80V 4A TO126-3 onsemi |
3,879 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN - Darlington | 4 A | 80 V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
MJE700STUTRANS PNP DARL 60V 4A TO126-3 onsemi |
3,947 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2206(T6CNO,A,F)TRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,199 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206(TE6,F,M)TRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,622 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206,T6F(JTRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,513 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206A(T6SEP,F,MTRANS NPN 120V 2A TO92MOD Toshiba Semiconductor and Storage |
2,699 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 120 V | 1.5V @ 1mA, 1A | - | 2000 @ 1A, 2V | 900 mW | - | 150°C (TJ) | Through Hole |
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