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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KSC3073YTUTRANS NPN 30V 3A IPAK onsemi |
3,870 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 3 A | 30 V | 800mV @ 200mA, 2A | 1µA (ICBO) | 120 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
2SC5171(ONK,Q,M)TRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
2,118 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
KSE702STRANS PNP DARL 80V 4A TO126-3 onsemi |
3,050 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP - Darlington | 4 A | 80 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SC5171,MATUDQ(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,689 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
TN3440ATRANS NPN 250V 0.1A TO226-3 onsemi |
3,640 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 100 mA | 250 V | 500mV @ 4mA, 50mA | 50µA | 40 @ 20mA, 10V | 1 W | 15MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2SC5171,ONKQ(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
2,093 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
|
2SC5171,Q(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,396 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
|
|
KSC5042MSTUTRANS NPN 900V 0.1A TO126-3 onsemi |
3,049 | - |
RFQ |
Tube | - | Obsolete | NPN | 100 mA | 900 V | 5V @ 4mA, 20mA | 10µA (ICBO) | 30 @ 10mA, 5V | 6 W | - | - | Through Hole | |
|
|
2SC5172(YAZK,Q,M)TRANS NPN 400V 5A TO220NIS Toshiba Semiconductor and Storage |
2,699 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 5 A | 400 V | 1V @ 250mA, 2A | 20µA (ICBO) | 20 @ 500mA, 5V | 2 W | - | 150°C (TJ) | Through Hole |
|
2SC5201(T6MURATAFMTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,310 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
KSE702STUTRANS PNP DARL 80V 4A TO126-3 onsemi |
2,326 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP - Darlington | 4 A | 80 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
|
|
2SC5201(TE6,F,M)TRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,452 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
KSD1691YSTSTUTRANS NPN 60V 5A TO126-3 onsemi |
2,481 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 5 A | 60 V | 300mV @ 200mA, 2A | 10µA (ICBO) | 160 @ 2A, 1V | 1.3 W | - | 150°C (TJ) | Through Hole |
|
|
2SC5201,F(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,329 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
2SC5201,T6F(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,290 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
KSA1243OTUTRANS PNP 30V 3A IPAK onsemi |
3,428 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 3 A | 30 V | 800mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC5201,T6MURAF(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,462 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
KSA1243YTUTRANS PNP 30V 3A IPAK onsemi |
3,699 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 3 A | 30 V | 800mV @ 200mA, 2A | 1µA (ICBO) | 120 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC5459(TOJS,Q,M)TRANS NPN 400V 3A TO220NIS Toshiba Semiconductor and Storage |
3,439 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 400 V | 1V @ 150mA, 1.2A | 100µA (ICBO) | 20 @ 300mA, 5V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
MJE800STUTRANS NPN DARL 60V 4A TO126-3 onsemi |
2,211 | - |
RFQ |
Scheda tecnica |
Bulk,Tube,Tube,Tube | - | Obsolete | NPN - Darlington | 4 A | 60 V | 2.5V @ 30mA, 1.5A | 100µA | 750 @ 1.5A, 3V | 40 W | - | 150°C (TJ) | Through Hole |
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