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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KSA1220AYSTSTUTRANS PNP 160V 1.2A TO126 onsemi |
3,875 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 1.2 A | 160 V | 700mV @ 200mA, 1A | 1µA (ICBO) | 160 @ 300mA, 5V | 1.2 W | 175MHz | 150°C (TJ) | Through Hole |
|
KSE350STUTRANS PNP 300V 0.5A TO126-3 onsemi |
2,914 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | PNP | 500 mA | 300 V | - | 100µA (ICBO) | 30 @ 50mA, 10V | 20 W | - | 150°C (TJ) | Through Hole |
|
ZTX614TRANS NPN DARL 100V 0.8A TO226 onsemi |
2,943 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN - Darlington | 800 mA | 100 V | 1.25V @ 8mA, 800mA | 100nA (ICBO) | 10000 @ 500mA, 5V | 1 W | - | -55°C ~ 150°C (TJ) | Through Hole |
|
|
KSE13003H1ASTRANS NPN 400V 1.5A TO126-3 onsemi |
3,974 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | - | 9 @ 500mA, 2V | 20 W | 4MHz | 150°C (TJ) | Through Hole |
|
|
KSE13003H2ASTRANS NPN 400V 1.5A TO126-3 onsemi |
3,042 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | - | 14 @ 500mA, 2V | 20 W | 4MHz | 150°C (TJ) | Through Hole |
|
|
KSE13003ASTRANS NPN 400V 1.5A TO126-3 onsemi |
3,288 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | - | 8 @ 500mA, 2V | 20 W | 4MHz | 150°C (TJ) | Through Hole |
|
|
KSE13003ASTUTRANS NPN 400V 1.5A TO126-3 onsemi |
3,313 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 1.5 A | 400 V | 3V @ 500mA, 1.5A | - | 8 @ 500mA, 2V | 20 W | 4MHz | 150°C (TJ) | Through Hole |
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|
FPN530ATRANS NPN 30V 3A TO226 onsemi |
2,699 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 30 V | 250mV @ 100mA, 1A | 100nA (ICBO) | 250 @ 100mA, 2V | 1 W | 150MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
MJE180PWDTRANS NPN 40V 3A TO126 onsemi |
3,559 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 40 V | 1.7V @ 600mA, 3A | 100nA (ICBO) | 50 @ 100mA, 1V | 1.5 W | 50MHz | 150°C (TJ) | Through Hole |
|
FPN660A_D26ZTRANS PNP 60V 3A TO226 onsemi |
3,697 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Obsolete | PNP | 3 A | 60 V | 400mV @ 200mA, 2A | 100nA (ICBO) | 250 @ 500mA, 2V | 1 W | 75MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
2SC3665-Y,T2NSF(JTRANS NPN 120V 0.8A MSTM Toshiba Semiconductor and Storage |
2,548 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1 W | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC3665-Y,T2YNSF(JTRANS NPN 120V 0.8A MSTM Toshiba Semiconductor and Storage |
3,333 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1 W | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SC3668-O,T2CLAF(JTRANS NPN 50V 2A MSTM Toshiba Semiconductor and Storage |
3,020 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3668-Y,F2PANF(JTRANS NPN 50V 2A MSTM Toshiba Semiconductor and Storage |
3,104 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3668-Y,T2F(JTRANS NPN 50V 2A MSTM Toshiba Semiconductor and Storage |
2,461 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3668-Y,T2F(MTRANS NPN 50V 2A MSTM Toshiba Semiconductor and Storage |
2,991 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3668-Y,T2WNLF(JTRANS NPN 50V 2A MSTM Toshiba Semiconductor and Storage |
3,574 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3669-Y(T2OMI,FMTRANS NPN 80V 2A MSTM Toshiba Semiconductor and Storage |
2,897 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3669-Y,T2PASF(MTRANS NPN 80V 2A MSTM Toshiba Semiconductor and Storage |
3,761 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SC3672-O(T2ASH,FMTRANS NPN 300V 0.1A MSTM Toshiba Semiconductor and Storage |
2,115 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 100 mA | 300 V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 20mA, 10V | 1 W | 80MHz | 150°C (TJ) | Through Hole |
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