Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK1401A-E

2SK1401A-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,991 -

RFQ

2SK1401A-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
EPC2020

EPC2020

GANFET N-CH 60V 90A DIE

EPC
4,600 -

RFQ

EPC2020

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 60 V 90A (Ta) 5V 2.2mOhm @ 31A, 5V 2.5V @ 16mA 16 nC @ 5 V +6V, -4V 1780 pF @ 30 V - - -40°C ~ 150°C (TJ) Surface Mount
IRFF9231

IRFF9231

MOSFET N-CH 150V 4A TO205AF

International Rectifier
3,281 -

RFQ

IRFF9231

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) - - - - - - - 25W - Through Hole
NTP125N65S3H

NTP125N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
737 -

RFQ

NTP125N65S3H

Scheda tecnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4V @ 2.1mA 44 nC @ 10 V ±30V 2200 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMP075N15NS1_T0_00601

PSMP075N15NS1_T0_00601

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
1,998 -

RFQ

PSMP075N15NS1_T0_00601

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 125A (Tc) 7V, 10V 7.5mOhm @ 50A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 6511 pF @ 75 V - 258.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP7N80P

IXFP7N80P

MOSFET N-CH 800V 7A TO220AB

IXYS
300 -

RFQ

IXFP7N80P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP095N65S3H

NTP095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
776 -

RFQ

NTP095N65S3H

Scheda tecnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK090E65Z,S1X

TK090E65Z,S1X

650V DTMOS VI TO-220 90MOHM

Toshiba Semiconductor and Storage
200 -

RFQ

TK090E65Z,S1X

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Through Hole
NTHL099N60S5

NTHL099N60S5

NTHL099N60S5

onsemi
438 -

RFQ

NTHL099N60S5

Scheda tecnica

Tube SuperFET® V Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 13.5A, 10V 4V @ 2.8mA 48 nC @ 10 V ±30V 2500 pF @ 400 V - 184W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2396

NTE2396

MOSFET N-CHANNEL 100V 28A TO220

NTE Electronics, Inc
348 -

RFQ

NTE2396

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP460P2

IXTP460P2

MOSFET N-CH 500V 24A TO220AB

IXYS
210 -

RFQ

IXTP460P2

Scheda tecnica

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2395

NTE2395

MOSFET N-CHANNEL 60V 50A TO220

NTE Electronics, Inc
125 -

RFQ

NTE2395

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK60S4DPP-E0#T2

RJK60S4DPP-E0#T2

MOSFET N-CH 600V 16A TO220FP

Renesas Electronics America Inc
114,548 -

RFQ

RJK60S4DPP-E0#T2

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) - 290mOhm @ 8A, 10V - 18 nC @ 10 V - 988 pF @ 25 V Super Junction 29.9W (Tc) 150°C (TJ) Through Hole
EPC2034

EPC2034

GANFET N-CH 200V 48A DIE

EPC
1,654 -

RFQ

EPC2034

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Not For New Designs N-Channel GaNFET (Gallium Nitride) 200 V 48A (Ta) 5V 10mOhm @ 20A, 5V 2.5V @ 7mA 8.8 nC @ 5 V +6V, -4V 950 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
2SK1567-04-E

2SK1567-04-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
16,233 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HAF2012-92L

HAF2012-92L

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,881 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1556AH-AZ

UPA1556AH-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
22,351 -

RFQ

UPA1556AH-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NTE491T

NTE491T

MOSFET N-CHANNEL 60V 310MA TO237

NTE Electronics, Inc
596 -

RFQ

NTE491T

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - +15V, -300mV 60 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
AUIRFP2907

AUIRFP2907

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
11,043 -

RFQ

AUIRFP2907

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH125N65S3R0-F155

FCH125N65S3R0-F155

MOSFET N-CH 650V 24A TO247-3

onsemi
430 -

RFQ

FCH125N65S3R0-F155

Scheda tecnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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