Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE2397

NTE2397

MOSFET N-CHANNEL 400V 10A TO220

NTE Electronics, Inc
511 -

RFQ

NTE2397

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1620L-E

2SK1620L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,289 -

RFQ

2SK1620L-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
PSMN057-200P,127

PSMN057-200P,127

MOSFET N-CH 200V 39A TO220AB

Nexperia USA Inc.
4,795 -

RFQ

PSMN057-200P,127

Scheda tecnica

Bulk,Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 57mOhm @ 17A, 10V 4V @ 1mA 96 nC @ 10 V ±20V 3750 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA340N04T4

IXTA340N04T4

MOSFET N-CH 40V 340A TO263AA

IXYS
228 -

RFQ

IXTA340N04T4

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HAF1002-92L

HAF1002-92L

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,163 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
R6520ENZ4C13

R6520ENZ4C13

650V 20A TO-247, LOW-NOISE POWER

Rohm Semiconductor
586 -

RFQ

R6520ENZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R6035VNXC7G

R6035VNXC7G

600V 17A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor
1,100 -

RFQ

R6035VNXC7G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V, 15V 114mOhm @ 8A, 15V 6.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 100 V - 81W (Tc) 150°C (TJ) Through Hole
MTY14N100E

MTY14N100E

N-CHANNEL POWER MOSFET

onsemi
1,900 -

RFQ

MTY14N100E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NP100N04PUK(1)-E1-AY

NP100N04PUK(1)-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRF1404

AUIRF1404

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
838 -

RFQ

AUIRF1404

Scheda tecnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R145CFD7XKSA1

IPW60R145CFD7XKSA1

MOSFET HIGH POWER

Infineon Technologies
178 -

RFQ

IPW60R145CFD7XKSA1

Scheda tecnica

Tube - Active - MOSFET (Metal Oxide) - 16A (Tc) - - - - - - Standard - - Surface Mount
RJK6013DPP-00#T2

RJK6013DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
36,564 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1636L-E

2SK1636L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,015 -

RFQ

2SK1636L-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPA65R420CFDXKSA1

IPA65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies
3,675 -

RFQ

IPA65R420CFDXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R420CFDXKSA1

IPP65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220-3

Infineon Technologies
333 -

RFQ

IPP65R420CFDXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R420CFDXKSA2

IPA65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies
3,179 -

RFQ

IPA65R420CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R420CFDXKSA2

IPP65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220-3

Infineon Technologies
2,867 -

RFQ

IPP65R420CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY08N100D2-TRL

IXTY08N100D2-TRL

MOSFET N-CH 1000V 800MA TO252

IXYS
2,797 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tj) 0V 21Ohm @ 400mA, 0V 4V @ 25µA 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOB284L

AOB284L

MOSFET N-CH 80V 16A/105A TO263

Alpha & Omega Semiconductor Inc.
3,386 -

RFQ

AOB284L

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 105A (Tc) 6V, 10V 4.3mOhm @ 20A, 10V 3.3V @ 250µA 100 nC @ 10 V ±20V 5154 pF @ 40 V - 2.1W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT160A60L

AOT160A60L

MOSFET N-CH 600V 24A TO220

Alpha & Omega Semiconductor Inc.
2,539 -

RFQ

AOT160A60L

Scheda tecnica

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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