Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTPF095N65S3H

NTPF095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
778 -

RFQ

NTPF095N65S3H

Scheda tecnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tj) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030ENXC7G

R6030ENXC7G

600V 30A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
996 -

RFQ

R6030ENXC7G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
RX3G18BGNC16

RX3G18BGNC16

NCH 40V 180A, TO-220AB, POWER MO

Rohm Semiconductor
2,928 -

RFQ

RX3G18BGNC16

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.64mOhm @ 90A, 10V 2.5V @ 1mA 168 nC @ 10 V ±20V 12000 pF @ 20 V - 125W (Tc) 150°C (TJ) Through Hole
IXFA36N60X3

IXFA36N60X3

MOSFET ULTRA JCT 600V 36A TO263

IXYS
104 -

RFQ

IXFA36N60X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 5V @ 2.5mA 29 nC @ 10 V ±20V 2030 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB7030L

FDB7030L

MOSFET N-CH 30V 80A TO263AB

Fairchild Semiconductor
65,084 -

RFQ

FDB7030L

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Ta) 4.5V, 10V 7mOhm @ 40A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2440 pF @ 15 V - 68W (Tc) -65°C ~ 175°C (TJ) Surface Mount
SIPC69SN60C3X3SA1

SIPC69SN60C3X3SA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTH20N65X2

IXTH20N65X2

MOSFET N-CH 650V 20A TO247

IXYS
280 -

RFQ

IXTH20N65X2

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2378

NTE2378

MOSFET N-CHANNEL 900V 5A TO3P

NTE Electronics, Inc
104 -

RFQ

NTE2378

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) 10V 3.6Ohm @ 2A, 10V 3V @ 1mA - ±30V 700 pF @ 20 V - 120W (Tc) 150°C Through Hole
R6030KNXC7G

R6030KNXC7G

600V 30A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
1,000 -

RFQ

R6030KNXC7G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
R6530ENXC7G

R6530ENXC7G

650V 30A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6530ENXC7G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 140mOhm @ 14.5A, 10V 4V @ 960µA 90 nC @ 10 V ±20V 2100 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
R6530KNXC7G

R6530KNXC7G

650V 30A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
894 -

RFQ

R6530KNXC7G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
TK7A60W,S4VX

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage
2,160 -

RFQ

TK7A60W,S4VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
UPA1559H(1)-AZ

UPA1559H(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
8,419 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1559H(2)-AZ

UPA1559H(2)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,719 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
TSM120N06LCR RLG

TSM120N06LCR RLG

MOSFET N-CH 60V 54A 8PDFN

Taiwan Semiconductor Corporation
3,953 -

RFQ

TSM120N06LCR RLG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 36.5 nC @ 10 V ±20V 2116 pF @ 30 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6035VNX3C16

R6035VNX3C16

600V 35A TO-220AB, PRESTOMOS WIT

Rohm Semiconductor
1,100 -

RFQ

R6035VNX3C16

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V, 15V 114mOhm @ 8A, 15V 6.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 100 V - 347W (Tc) 150°C (TJ) Through Hole
FS70SM-2#201

FS70SM-2#201

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,105 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTQ50N25T

IXTQ50N25T

MOSFET N-CH 250V 50A TO3P

IXYS
274 -

RFQ

IXTQ50N25T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT2904

AOT2904

MOSFET N-CH 100V 120A TO220

Alpha & Omega Semiconductor Inc.
3,282 -

RFQ

AOT2904

Scheda tecnica

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 4.4mOhm @ 20A, 10V 3.3V @ 250µA 135 nC @ 10 V ±20V 7085 pF @ 50 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF22N60M6

STF22N60M6

MOSFET N-CH 600V 15A TO220FP

STMicroelectronics
2,553 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 230mOhm @ 7.5A, 10V 4.75V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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