Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOW15S65

AOW15S65

MOSFET N-CH 650V 15A TO262

Alpha & Omega Semiconductor Inc.
2,920 -

RFQ

AOW15S65

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 4V @ 250µA 17.2 nC @ 10 V ±30V 841 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF9N60NTYDTU

FCPF9N60NTYDTU

MOSFET N-CH 600V 9A TO220F-3

onsemi
2,940 -

RFQ

FCPF9N60NTYDTU

Scheda tecnica

Tube,Tube,Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 1240 pF @ 100 V - 29.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N04S304ATMA1

IPB80N04S304ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,941 -

RFQ

IPB80N04S304ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK7Q60W,S1VQ

TK7Q60W,S1VQ

MOSFET N-CH 600V 7A IPAK

Toshiba Semiconductor and Storage
2,882 -

RFQ

TK7Q60W,S1VQ

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
STH80N10LF7-2AG

STH80N10LF7-2AG

MOSFET N-CH 100V 80A H2PAK-2

STMicroelectronics
2,590 -

RFQ

STH80N10LF7-2AG

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, STripFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 10mOhm @ 40A, 10V - 28.3 nC @ 4.5 V ±20V 2900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
2,305 -

RFQ

IPB120N04S4L02ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14560 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R360CFD7ATMA1

IPB60R360CFD7ATMA1

MOSFET N-CH 650V 7A TO263-3-2

Infineon Technologies
3,754 -

RFQ

IPB60R360CFD7ATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD6030L

FDD6030L

MOSFET N-CH 30V 12A/50A DPAK

onsemi
2,344 -

RFQ

FDD6030L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 50A (Tc) 4.5V, 10V 14.5mOhm @ 12A, 10V 3V @ 250µA 28 nC @ 5 V ±20V 1230 pF @ 15 V - 3.2W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR844DP-T1-GE3

SIR844DP-T1-GE3

MOSFET N-CH 25V 50A PPAK SO-8

Vishay Siliconix
3,857 -

RFQ

SIR844DP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 2.8mOhm @ 15A, 10V 2.6V @ 250µA 90 nC @ 10 V ±20V 3215 pF @ 10 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL40B212

IRL40B212

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
2,020 -

RFQ

IRL40B212

Scheda tecnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY90N055T2-TRL

IXTY90N055T2-TRL

MOSFET N-CH 55V 90A TO252

IXYS
2,530 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK6A65D(STA4,Q,M)

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage
2,588 -

RFQ

TK6A65D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IPA028N04NM3SXKSA1

IPA028N04NM3SXKSA1

TRENCH <= 40V PG-TO220-3

Infineon Technologies
3,353 -

RFQ

IPA028N04NM3SXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 89A (Tc) 10V 2.8mOhm @ 89A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 9500 pF @ 20 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB065N10N3GATMA1

IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
3,002 -

RFQ

IPB065N10N3GATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 6.5mOhm @ 80A, 10V 3.5V @ 90µA 64 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R0-40ULDX

PSMN1R0-40ULDX

MOSFET N-CH 40V 280A LFPAK56

Nexperia USA Inc.
2,949 -

RFQ

PSMN1R0-40ULDX

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 280A (Ta) - - - 127 nC @ 10 V - - - 164W 150°C (TJ) Surface Mount
STL17N60M6

STL17N60M6

MOSFET N-CH 600V 10A PWRFLAT HV

STMicroelectronics
3,739 -

RFQ

STL17N60M6

Scheda tecnica

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 350mOhm @ 6A, 10V 4.75V @ 250µA 16.7 nC @ 10 V ±25V 575 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL18N60M6

STL18N60M6

MOSFET N-CH 600V 9A POWERFLAT HV

STMicroelectronics
3,848 -

RFQ

STL18N60M6

Scheda tecnica

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 308mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH6004SCT

DMTH6004SCT

MOSFET N-CH 60V 100A TO220-3

Diodes Incorporated
2,025 -

RFQ

DMTH6004SCT

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.65mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 2.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB15S60L

AOB15S60L

MOSFET N-CH 600V 15A TO263

Alpha & Omega Semiconductor Inc.
2,578 -

RFQ

AOB15S60L

Scheda tecnica

Tape & Reel (TR) aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6 nC @ 10 V ±30V 717 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY2N100P-TRL

IXTY2N100P-TRL

MOSFET N-CH 1000V 2A TO252

IXYS
2,818 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 1A, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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