Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ216-E

2SJ216-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
21,710 -

RFQ

2SJ216-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IXTQ26P20P

IXTQ26P20P

MOSFET P-CH 200V 26A TO3P

IXYS
300 -

RFQ

IXTQ26P20P

Scheda tecnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH34N65X3

IXFH34N65X3

MOSFET 34A 650V X3 TO247

IXYS
545 -

RFQ

IXFH34N65X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5.2V @ 2.5mA 29 nC @ 10 V ±20V 2025 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6661

2N6661

MOSFET N-CH 90V 900MA TO39

Solid State Inc.
880 -

RFQ

2N6661

Scheda tecnica

Box - Active N-Channel MOSFET (Metal Oxide) 90 V 900mA (Tc) 5V, 10V 4mOhm @ 1A, 10V 2V @ 1mA - ±40V 50 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6660

2N6660

MOSFET N-CH 60V 1.1A TO39

Solid State Inc.
770 -

RFQ

2N6660

Scheda tecnica

Box - Active N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±40V 50 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP24N60C3XKSA1

SPP24N60C3XKSA1

MOSFET N-CH 650V 24.3A TO220-3

Infineon Technologies
208 -

RFQ

SPP24N60C3XKSA1

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2389

NTE2389

MOSFET N-CHANNEL 60V 35A TO220

NTE Electronics, Inc
516 -

RFQ

NTE2389

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta) 10V 45mOhm @ 20A, 10V 4V @ 1mA - 30V 2000 pF @ 25 V - 125W (Ta) 175°C (TJ) Through Hole
2SK1464

2SK1464

N-CHANNEL POWER MOSFET

onsemi
6,645 -

RFQ

2SK1464

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
MTY25N60E

MTY25N60E

N-CHANNEL POWER MOSFET

onsemi
2,233 -

RFQ

MTY25N60E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NTE2388

NTE2388

MOSFET N-CHANNEL 200V 18A TO220

NTE Electronics, Inc
1,242 -

RFQ

NTE2388

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1600 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2931

NTE2931

MOSFET N-CH 200V 12.8A TO3PML

NTE Electronics, Inc
212 -

RFQ

NTE2931

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 40V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FS50VS-3-T11

FS50VS-3-T11

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
24,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPA030N10N3GXKSA1

IPA030N10N3GXKSA1

MOSFET N-CH 100V 79A TO220-FP

Infineon Technologies
500 -

RFQ

IPA030N10N3GXKSA1

Scheda tecnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 6V, 10V 3mOhm @ 79A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6535ENZ4C13

R6535ENZ4C13

650V 35A TO-247, LOW-NOISE POWER

Rohm Semiconductor
571 -

RFQ

R6535ENZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 4V @ 1.21mA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
R6535KNZ4C13

R6535KNZ4C13

650V 35A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor
528 -

RFQ

R6535KNZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 115mOhm @ 18.1A, 10V 5V @ 1.21mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
UPA1560H(3)-AZ

UPA1560H(3)-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
56,180 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTE2932

NTE2932

MOSFET N-CH 200V 21.3A TO3PML

NTE Electronics, Inc
488 -

RFQ

NTE2932

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 21.3A (Tc) 10V 85mOhm @ 10.65A, 10V 4V @ 250µA 123 nC @ 10 V ±20V 3000 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2371

NTE2371

MOSFET P-CHANNEL 100V 19A TO220

NTE Electronics, Inc
196 -

RFQ

NTE2371

Scheda tecnica

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTW24N40E

MTW24N40E

N-CHANNEL POWER MOSFET

onsemi
3,377 -

RFQ

MTW24N40E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPB020N04NGATMA1

IPB020N04NGATMA1

MOSFET N-CH 40V 140A TO263-7

Infineon Technologies
3,082 -

RFQ

IPB020N04NGATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 140A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 9700 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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