Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP4710PBF

IRFP4710PBF

MOSFET N-CH 100V 72A TO247AC

Infineon Technologies
3,551 -

RFQ

IRFP4710PBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTU4N70X2

IXTU4N70X2

MOSFET N-CH 700V 4A TO251

IXYS
3,914 -

RFQ

IXTU4N70X2

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 850mOhm @ 2A, 10V 4.5V @ 250µA 11.8 nC @ 10 V ±30V 386 pF @ 25 V - 80W (Tc) 150°C (TJ) Through Hole
STI21N65M5

STI21N65M5

MOSFET N-CH 650V 17A I2PAK

STMicroelectronics
2,915 -

RFQ

STI21N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 179mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
SI7868ADP-T1-GE3

SI7868ADP-T1-GE3

MOSFET N-CH 20V 40A PPAK SO-8

Vishay Siliconix
2,832 -

RFQ

SI7868ADP-T1-GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 1.6V @ 250µA 150 nC @ 10 V ±16V 6110 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMTS6D0N15MC

NVMTS6D0N15MC

PTNG 150V IN CEBU DFNW 8X8 FOR A

onsemi
3,418 -

RFQ

NVMTS6D0N15MC

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Ta), 128A (Tc) 10V 6.4mOhm @ 69A, 10V 4.5V @ 379µA 58 nC @ 10 V ±20V 4815 pF @ 75 V - 5W (Ta), 237W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies
2,591 -

RFQ

IPB180N03S4LH0ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 200µA 300 nC @ 10 V ±16V 23000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D15N03CGTWG

NTMJS1D15N03CGTWG

WIDE SOA

onsemi
2,702 -

RFQ

NTMJS1D15N03CGTWG

Scheda tecnica

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta), 257A (Tc) 10V 1.15mOhm @ 20A, 10V 2.2V @ 160µA 94 nC @ 10 V ±20V 7300 pF @ 15 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK12A60D(STA4,Q,M)

TK12A60D(STA4,Q,M)

MOSFET N-CH 600V 12A TO220SIS

Toshiba Semiconductor and Storage
3,736 -

RFQ

TK12A60D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 550mOhm @ 6A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IXTA140N055T2

IXTA140N055T2

MOSFET N-CH 55V 140A TO263

IXYS
2,576 -

RFQ

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 4760 pF @ 25 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NTMYS4D1N06CLTWG

NTMYS4D1N06CLTWG

MOSFET N-CH 60V 22A/100A LFPAK4

onsemi
3,670 -

RFQ

NTMYS4D1N06CLTWG

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 34 nC @ 10 V ±20V 2200 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H800NLWFT1G

NVMFS6H800NLWFT1G

MOSFET N-CH 80V 30A/224A 5DFN

onsemi
2,624 -

RFQ

NVMFS6H800NLWFT1G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 224A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 330µA 112 nC @ 10 V ±20V 6900 pF @ 40 V - 3.9W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIBC40GLCPBF

IRFIBC40GLCPBF

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix
2,108 -

RFQ

IRFIBC40GLCPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUA210N10S5N024AUMA1

IAUA210N10S5N024AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
2,668 -

RFQ

IAUA210N10S5N024AUMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Tj) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 150µA 119 nC @ 10 V ±20V 8696 pF @ 50 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3004-7P

AUIRFS3004-7P

MOSFET N-CH 40V 240A D2PAK-7

Infineon Technologies
3,017 -

RFQ

AUIRFS3004-7P

Scheda tecnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG11N80E-GE3

SIHG11N80E-GE3

MOSFET N-CH 800V 12A TO247AC

Vishay Siliconix
3,081 -

RFQ

SIHG11N80E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK13A50D(STA4,Q,M)

TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO220SIS

Toshiba Semiconductor and Storage
2,353 -

RFQ

TK13A50D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 400mOhm @ 6.5A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45D(STA4,Q,M)

TK14A45D(STA4,Q,M)

MOSFET N-CH 450V 14A TO220SIS

Toshiba Semiconductor and Storage
2,525 -

RFQ

TK14A45D(STA4,Q,M)

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 14A - 340mOhm @ 7A, 10V - - - - - - - Through Hole
IXFA12N65X2-TRL

IXFA12N65X2-TRL

MOSFET N-CH 650V 12A TO263

IXYS
3,562 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3710

2SK3710

MOSFET N-CH 60V 85A TO220S

Sanken
2,237 -

RFQ

2SK3710

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Ta) 10V 6mOhm @ 35A, 10V 4V @ 1mA - ±20V 8400 pF @ 10 V - 100W (Tc) 150°C (TJ) Surface Mount
IPI120N06S402AKSA2

IPI120N06S402AKSA2

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
500 -

RFQ

IPI120N06S402AKSA2

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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