Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOK22N50L

AOK22N50L

MOSFET N-CH 500V 22A TO247

Alpha & Omega Semiconductor Inc.
3,521 -

RFQ

AOK22N50L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V ±30V 3710 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N65EF-T1-GE3

SIHH11N65EF-T1-GE3

MOSFET N-CH 650V 11A PPAK 8 X 8

Vishay Siliconix
3,408 -

RFQ

SIHH11N65EF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 382mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1243 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP42N15T

IXTP42N15T

MOSFET N-CH 150V 42A TO220AB

IXYS
2,706 -

RFQ

IXTP42N15T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 42A (Tc) 10V 45mOhm @ 500mA, 10V 4.5V @ 250µA 21 nC @ 10 V ±30V 1880 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB14N80K5

STB14N80K5

MOSFET N-CH 800V 12A D2PAK

STMicroelectronics
2,966 -

RFQ

STB14N80K5

Scheda tecnica

Tape & Reel (TR) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 445mOhm @ 6A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 620 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB180N04S4LH0ATMA1

IPB180N04S4LH0ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,710 -

RFQ

IPB180N04S4LH0ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1mOhm @ 100A, 10V 2.2V @ 180µA 310 nC @ 10 V +20V, -16V 24440 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK7A80W,S4X

TK7A80W,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,655 -

RFQ

TK7A80W,S4X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 35W (Tc) 150°C Through Hole
R6008FNX

R6008FNX

MOSFET N-CH 600V 8A TO-220FM

Rohm Semiconductor
777 -

RFQ

R6008FNX

Scheda tecnica

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 950mOhm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 580 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
STK800

STK800

MOSFET N-CH 30V 20A POLARPAK

STMicroelectronics
2,803 -

RFQ

STK800

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 7.8mOhm @ 10A, 10V 2.5V @ 250µA 13.4 nC @ 4.5 V ±16V 1380 pF @ 25 V - 5.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCH190N65F-F155

FCH190N65F-F155

MOSFET N-CH 650V 20.6A TO247

onsemi
3,142 -

RFQ

FCH190N65F-F155

Scheda tecnica

Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS3307TRLPBF

IRFS3307TRLPBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,797 -

RFQ

IRFS3307TRLPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8350LET40

FDMS8350LET40

MOSFET N-CH 40V 49A/300A POWER56

onsemi
3,747 -

RFQ

FDMS8350LET40

Scheda tecnica

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 300A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 219 nC @ 10 V ±20V 16590 pF @ 20 V - 3.33W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA42N15T-TRL

IXTA42N15T-TRL

MOSFET N-CH 150V 42A TO263

IXYS
3,309 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 150 V 42A (Tc) 10V 45mOhm @ 21A, 10V 4.5V @ 250µA 21 nC @ 10 V ±30V 1880 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC40LPBF

IRFBC40LPBF

MOSFET N-CH 600V 6.2A TO262-3

Vishay Siliconix
3,306 -

RFQ

IRFBC40LPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFWS0D4N04XMT1G

NVMFWS0D4N04XMT1G

40V T10M IN S08FL GEN 2 PACKAGE

onsemi
2,600 -

RFQ

NVMFWS0D4N04XMT1G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 519A (Tc) 10V 0.42mOhm @ 50A, 10V 3.5V @ 330µA 138 nC @ 10 V ±20V 8550 pF @ 25 V - 197W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK16A60W5,S4VX

TK16A60W5,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage
3,082 -

RFQ

TK16A60W5,S4VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
SIHB22N60EL-GE3

SIHB22N60EL-GE3

MOSFET N-CH 600V 21A TO263

Vishay Siliconix
3,611 -

RFQ

SIHB22N60EL-GE3

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA12N50P-TRL

IXFA12N50P-TRL

MOSFET N-CH 500V 12A TO263

IXYS
2,810 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 1mA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N50D2-TRL

IXTA3N50D2-TRL

MOSFET N-CH 500V 3A TO263

IXYS
3,218 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tj) 0V 1.5Ohm @ 1.5A, 0V 4.5V @ 250µA 40 nC @ 5 V ±20V 1070 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BBS3002-TL-1E

BBS3002-TL-1E

MOSFET P-CH 60V 100A D2PAK

onsemi
3,659 -

RFQ

BBS3002-TL-1E

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4V, 10V 5.8mOhm @ 50A, 10V - 280 nC @ 10 V ±20V 13200 pF @ 20 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCA20N60

FCA20N60

MOSFET N-CH 600V 20A TO3PN

onsemi
2,640 -

RFQ

FCA20N60

Scheda tecnica

Tube,Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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