Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM055N03EPQ56 RLG

TSM055N03EPQ56 RLG

MOSFET N-CH 30V 80A 8PDFN

Taiwan Semiconductor Corporation
3,529 -

RFQ

TSM055N03EPQ56 RLG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 11.1 nC @ 4.5 V ±20V 1210 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
QS5U27TR

QS5U27TR

MOSFET P-CH 20V 1.5A TSMT5

Rohm Semiconductor
1,932 -

RFQ

QS5U27TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V 2V @ 1mA 4.2 nC @ 4.5 V ±12V 325 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) Surface Mount
NTD4815N-35G

NTD4815N-35G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi
1,468 -

RFQ

NTD4815N-35G

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 14.1 nC @ 11.5 V ±20V 770 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
FJ4B01120L1

FJ4B01120L1

MOSFET P-CH 12V 2.6A ULGA004

Panasonic Electronic Components
1,040 -

RFQ

FJ4B01120L1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 2.6A (Ta) 1.5V, 4.5V 51mOhm @ 2A, 4.5V 1V @ 2mA 10.7 nC @ 4.5 V ±8V 814 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) Surface Mount
FDZ661PZ

FDZ661PZ

MOSFET P-CH 20V 2.6A 4WLCSP

onsemi
6,645 -

RFQ

FDZ661PZ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 140mOhm @ 2A, 4.5V 1.2V @ 250µA 8.8 nC @ 4.5 V ±8V 555 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3477DV-T1-GE3

SI3477DV-T1-GE3

MOSFET P-CH 12V 8A 6TSOP

Vishay Siliconix
1,855 -

RFQ

SI3477DV-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 17.5mOhm @ 9A, 4.5V 1V @ 250µA 90 nC @ 10 V ±10V 2600 pF @ 6 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RTF015P02TL

RTF015P02TL

MOSFET P-CH 20V 1.5A TUMT3

Rohm Semiconductor
3,000 -

RFQ

RTF015P02TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 135mOhm @ 1.5A, 4.5V 2V @ 1mA 5.2 nC @ 4.5 V ±12V 560 pF @ 10 V - 800mW (Ta) 150°C (TJ) Surface Mount
MCM1567-TP

MCM1567-TP

MOSFET P-CH 20V 9A DFN2020-6J

Micro Commercial Co
1,527 -

RFQ

MCM1567-TP

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 2.5V, 4.5V 18mOhm @ 6.7A, 4.5V 1V @ 250µA 34 nC @ 4.5 V ±12V 2760 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PXN4R7-30QLJ

PXN4R7-30QLJ

PXN4R7-30QL/SOT8002/MLPAK33

Nexperia USA Inc.
1,511 -

RFQ

PXN4R7-30QLJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 74A (Tc) 4.5V, 10V 4.7mOhm @ 15.2A, 10V 2.5V @ 250µA 46.2 nC @ 10 V ±20V 2100 pF @ 15 V - 1.8W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3

MOSFET N-CH 30V 27A/60A PPAK SO8

Vishay Siliconix
979 -

RFQ

SIRA12BDP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 60A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1470 pF @ 15 V - 5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RQ5E065AJTCL

RQ5E065AJTCL

MOSFET N-CH 30V 6.5A TSMT3

Rohm Semiconductor
751 -

RFQ

RQ5E065AJTCL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 2.5V, 4.5V 18.1mOhm @ 6.5A, 4.5V 1.5V @ 2mA 12.2 nC @ 4.5 V ±12V 1370 pF @ 15 V - 760mW (Ta) 150°C (TJ) Surface Mount
PSMN027-100BS,118

PSMN027-100BS,118

MOSFET N-CH 100V 37A D2PAK

Nexperia USA Inc.
3,803 -

RFQ

PSMN027-100BS,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 37A (Tc) 10V 26.8mOhm @ 15A, 10V 4V @ 1mA 30 nC @ 10 V ±20V 1624 pF @ 50 V - 103W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1R4N100P

IXTP1R4N100P

MOSFET N-CH 1000V 1.4A TO220AB

IXYS
2,615 -

RFQ

IXTP1R4N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N60D-E3

SIHG17N60D-E3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix
3,560 -

RFQ

SIHG17N60D-E3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N60D-GE3

SIHG17N60D-GE3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix
3,957 -

RFQ

SIHG17N60D-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI320N20N3GAKSA1

IPI320N20N3GAKSA1

MOSFET N-CH 200V 34A TO262-3

Infineon Technologies
3,104 -

RFQ

IPI320N20N3GAKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOT29S50L

AOT29S50L

MOSFET N-CH 500V 29A TO220

Alpha & Omega Semiconductor Inc.
3,650 -

RFQ

AOT29S50L

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N65E-T1-GE3

SIHH11N65E-T1-GE3

MOSFET N-CH 650V 12A PPAK 8 X 8

Vishay Siliconix
2,939 -

RFQ

SIHH11N65E-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 363mOhm @ 6A, 10V 4V @ 250µA 68 nC @ 10 V ±30V 1257 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA200N055T2-TRL

IXTA200N055T2-TRL

MOSFET N-CH 55V 200A TO263

IXYS
3,743 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6970 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA220N04T2-TRL

IXTA220N04T2-TRL

MOSFET N-CH 40V 220A TO263

IXYS
3,897 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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