Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTMFS5C612NLT3G

NTMFS5C612NLT3G

MOSFET N-CH 60V 36A/235A 5DFN

onsemi
3,988 -

RFQ

NTMFS5C612NLT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 235A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R160P6ATMA1

IPB60R160P6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies
3,287 -

RFQ

IPB60R160P6ATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

MOSFET N-CHANNEL_30/40V

Infineon Technologies
2,472 -

RFQ

IPB80N04S2H4ATMA2

Scheda tecnica

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
IPP015N04NF2SAKMA1

IPP015N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
2,501 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IXTA08N120P-TRL

IXTA08N120P-TRL

MOSFET N-CH 1200V 800MA TO263

IXYS
3,089 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 400mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB14NM50N

STB14NM50N

MOSFET N-CH 500V 12A D2PAK

STMicroelectronics
3,940 -

RFQ

STB14NM50N

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 100µA 27 nC @ 10 V ±25V 816 pF @ 50 V - 90W (Tc) 150°C (TJ) Surface Mount
STI33N60M2

STI33N60M2

MOSFET N-CH 600V 26A I2PAK

STMicroelectronics
2,433 -

RFQ

STI33N60M2

Scheda tecnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 125mOhm @ 13A, 10V 4V @ 250µA 45.5 nC @ 10 V ±25V 1781 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK13A55DA(STA4,QM)

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage
2,345 -

RFQ

TK13A55DA(STA4,QM)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IXTU01N100

IXTU01N100

MOSFET N-CH 1000V 100MA TO251

IXYS
2,428 -

RFQ

IXTU01N100

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 100mA (Tc) 10V 80Ohm @ 100mA, 10V 4.5V @ 25µA 6.9 nC @ 10 V ±20V 54 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA2N100P

IXTA2N100P

MOSFET N-CH 1000V 2A TO263

IXYS
3,104 -

RFQ

IXTA2N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA08N100D2HV

IXTA08N100D2HV

MOSFET N-CH 1000V 800MA TO263HV

IXYS
2,236 -

RFQ

IXTA08N100D2HV

Scheda tecnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tj) 0V 21Ohm @ 400mA, 0V 4V @ 25µA 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF4E110BNTR

RF4E110BNTR

MOSFET N-CH 30V 11A HUML2020L8

Rohm Semiconductor
1,171 -

RFQ

RF4E110BNTR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.1mOhm @ 11A, 10V 2V @ 250µA 24 nC @ 10 V ±20V 1200 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
TK16A60W,S4X

TK16A60W,S4X

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage
3,867 -

RFQ

TK16A60W,S4X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 40 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) - Through Hole
TP5335K1-G

TP5335K1-G

MOSFET P-CH 350V 85MA TO236AB

Microchip Technology
2,738 -

RFQ

TP5335K1-G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 350 V 85mA (Tj) 4.5V, 10V 30Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 110 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C Surface Mount
IPP05CN10NGXKSA1

IPP05CN10NGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
2,628 -

RFQ

IPP05CN10NGXKSA1

Scheda tecnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 181 nC @ 10 V ±20V 12000 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHFR120-GE3

SIHFR120-GE3

MOSFET N-CHANNEL 100V

Vishay Siliconix
3,161 -

RFQ

SIHFR120-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDA20N50-F109

FDA20N50-F109

MOSFET N-CH 500V 22A TO3PN

onsemi
16,600 -

RFQ

FDA20N50-F109

Scheda tecnica

Bulk,Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
RSQ035N03HZGTR

RSQ035N03HZGTR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor
1,718 -

RFQ

RSQ035N03HZGTR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4V, 10V 62mOhm @ 3.5A, 10V 2.5V @ 1mA 7.4 nC @ 5 V ±20V 290 pF @ 10 V - 950mW (Ta) 150°C (TJ) Surface Mount
TK7E80W,S1X

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage
3,537 -

RFQ

TK7E80W,S1X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C Through Hole
FDB8443

FDB8443

MOSFET N-CH 40V 25A/120A TO263AB

onsemi
3,801 -

RFQ

FDB8443

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 120A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 9310 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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