Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB80N06S2H5ATMA2

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
289 -

RFQ

IPB80N06S2H5ATMA2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
QS5U17TR

QS5U17TR

MOSFET N-CH 30V 2A TSMT5

Rohm Semiconductor
5,910 -

RFQ

QS5U17TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 2.5V, 4.5V 100mOhm @ 2A, 4.5V 1.5V @ 1mA 3.9 nC @ 4.5 V ±12V 175 pF @ 10 V Schottky Diode (Isolated) 900mW (Ta) 150°C (TJ) Surface Mount
AOB282L

AOB282L

MOSFET N-CH 80V 18.5A/105A TO263

Alpha & Omega Semiconductor Inc.
2,483 -

RFQ

AOB282L

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 105A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.5V @ 250µA 178 nC @ 10 V ±20V 7765 pF @ 40 V - 2.1W (Ta), 272.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RSQ035N03TR

RSQ035N03TR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor
5,749 -

RFQ

RSQ035N03TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4V, 10V 62mOhm @ 3.5A, 10V 2.5V @ 1mA 7.4 nC @ 5 V 20V 290 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SQP120N10-3M8_GE3

SQP120N10-3M8_GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix
2,035 -

RFQ

SQP120N10-3M8_GE3

Scheda tecnica

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 190 nC @ 10 V ±20V 7230 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPTG025N08NM5ATMA1

IPTG025N08NM5ATMA1

TRENCH 40<-<100V PG-HSOG-8

Infineon Technologies
2,727 -

RFQ

IPTG025N08NM5ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 184A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6500 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF26N65DM2

STF26N65DM2

MOSFET N-CH 650V 20A TO220FP

STMicroelectronics
3,528 -

RFQ

STF26N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4110GPBF

IRFB4110GPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
3,461 -

RFQ

IRFB4110GPBF

Scheda tecnica

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL60S216

IRL60S216

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,721 -

RFQ

IRL60S216

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK12A55D(STA4,Q,M)

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage
3,220 -

RFQ

TK12A55D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK10A80W,S4X

TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

Toshiba Semiconductor and Storage
3,937 -

RFQ

TK10A80W,S4X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C Through Hole
IXTA100N04T2

IXTA100N04T2

MOSFET N-CH 40V 100A TO263

IXYS
2,026 -

RFQ

IXTA100N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 25.5 nC @ 10 V ±20V 2690 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA70N075T2

IXTA70N075T2

MOSFET N-CH 75V 70A TO263

IXYS
2,318 -

RFQ

IXTA70N075T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2725 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PXP8R3-20QXJ

PXP8R3-20QXJ

PXP8R3-20QX/SOT8002/MLPAK33

Nexperia USA Inc.
2,186 -

RFQ

PXP8R3-20QXJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 12.4A (Ta), 65.1A (Tc) 2.5V, 4.5V 8.3mOhm @ 12.3A, 4.5V 1.25V @ 250µA 91.8 nC @ 4.5 V ±12V 6200 pF @ 10 V - 1.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA90N055T2

IXTA90N055T2

MOSFET N-CH 55V 90A TO263

IXYS
3,512 -

RFQ

IXTA90N055T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP120N04T2

IXTP120N04T2

MOSFET N-CH 40V 120A TO220AB

IXYS
2,608 -

RFQ

IXTP120N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 6.1mOhm @ 25A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 3240 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF29S50L

AOTF29S50L

MOSFET N-CH 500V 29A TO220-3F

Alpha & Omega Semiconductor Inc.
2,502 -

RFQ

AOTF29S50L

Scheda tecnica

Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 37.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK25V60X5,LQ

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage
2,685 -

RFQ

TK25V60X5,LQ

Scheda tecnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK19A50W,S5X

TK19A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,921 -

RFQ

TK19A50W,S5X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) 150°C Through Hole
NTMFS5C404NLTWFT1G

NTMFS5C404NLTWFT1G

MOSFET N-CH 40V 5DFN

onsemi
3,550 -

RFQ

NTMFS5C404NLTWFT1G

Scheda tecnica

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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