Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RRH040P03TB1

RRH040P03TB1

MOSFET P-CH 30V 4A 8SOP

Rohm Semiconductor
2,290 -

RFQ

RRH040P03TB1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 75mOhm @ 4A, 10V 2.5V @ 1mA 5.2 nC @ 5 V ±20V 480 pF @ 10 V - 650mW (Ta) 150°C (TJ) Surface Mount
IPL60R140CFD7AUMA1

IPL60R140CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies
568 -

RFQ

IPL60R140CFD7AUMA1

Scheda tecnica

Tape & Reel (TR),Bulk - Active - - - 18A (Tc) - - - - - - - - - -
SI4491EDY-T1-GE3

SI4491EDY-T1-GE3

MOSFET P-CH 30V 17.3A 8SO

Vishay Siliconix
1,637 -

RFQ

SI4491EDY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 17.3A (Ta) 4.5V, 10V 6.5mOhm @ 13A, 10V 2.8V @ 250µA 153 nC @ 10 V ±25V 4620 pF @ 15 V - 3.1W (Ta), 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB70N10SL16ATMA1

IPB70N10SL16ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies
2,955 -

RFQ

IPB70N10SL16ATMA1

Scheda tecnica

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RQ7E110AJTCR

RQ7E110AJTCR

MOSFET N-CH 30V 11A TSMT8

Rohm Semiconductor
1,515 -

RFQ

RQ7E110AJTCR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Tc) 4.5V 9mOhm @ 4.5A, 11V 1.5V @ 10mA 22 nC @ 4.5 V ±12V 2410 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF540NSTRRPBF

IRF540NSTRRPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
1,460 -

RFQ

IRF540NSTRRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM600N25ECH C5G

TSM600N25ECH C5G

MOSFET N-CHANNEL 250V 8A TO251

Taiwan Semiconductor Corporation
1,699 -

RFQ

TSM600N25ECH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 250µA 8.4 nC @ 10 V ±30V 423 pF @ 25 V - 52W (Tc) 150°C (TJ) Through Hole
FDD4N60NZ

FDD4N60NZ

MOSFET N-CH 600V 3.4A DPAK

onsemi
1,618 -

RFQ

FDD4N60NZ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V 5V @ 250µA 10.8 nC @ 10 V ±25V 510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD2P40TM

FQD2P40TM

MOSFET P-CH 400V 1.56A DPAK

onsemi
1,495 -

RFQ

FQD2P40TM

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) QFET® Active P-Channel MOSFET (Metal Oxide) 400 V 1.56A (Tc) 10V 6.5Ohm @ 780mA, 10V 5V @ 250µA 13 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA10N80P-TRL

IXFA10N80P-TRL

MOSFET N-CH 800V 10A TO263

IXYS
2,416 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB7N52K3

STB7N52K3

MOSFET N-CH 525V 6A D2PAK

STMicroelectronics
4,761 -

RFQ

STB7N52K3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 525 V 6A (Tc) 10V 980mOhm @ 3.1A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 737 pF @ 100 V - 90W (Tc) 150°C (TJ) Surface Mount
SIHP17N80E-GE3

SIHP17N80E-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
3,212 -

RFQ

SIHP17N80E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD2NK60Z-1

STD2NK60Z-1

MOSFET N-CH 600V 1.4A IPAK

STMicroelectronics
3,531 -

RFQ

STD2NK60Z-1

Scheda tecnica

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 8Ohm @ 700mA, 10V 4.5V @ 50µA 10 nC @ 10 V ±30V 170 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C604NLWFAFT3G

NVMFS5C604NLWFAFT3G

MOSFET N-CH 60V 287A 5DFN

onsemi
2,816 -

RFQ

NVMFS5C604NLWFAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK15A50D(STA4,Q,M)

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage
2,441 -

RFQ

TK15A50D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
R6012ANX

R6012ANX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor
3,758 -

RFQ

R6012ANX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 420mOhm @ 6A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IPA65R190E6XKSA1

IPA65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies
3,468 -

RFQ

IPA65R190E6XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R190C6XKSA1

IPP65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220-3

Infineon Technologies
476 -

RFQ

IPP65R190C6XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R190C6XKSA1

IPI65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO262-3

Infineon Technologies
2,065 -

RFQ

IPI65R190C6XKSA1

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP12N65X2M

IXTP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS
3,919 -

RFQ

IXTP12N65X2M

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 250µA 17.7 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente