Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQU9N25TU

FQU9N25TU

MOSFET N-CH 250V 7.4A IPAK

onsemi
4,951 -

RFQ

FQU9N25TU

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FK8V03040L

FK8V03040L

MOSFET N CH 33V 10A WMINI8-F1

Panasonic Electronic Components
2,715 -

RFQ

FK8V03040L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 33 V 10A (Ta) 4.5V, 10V 10mOhm @ 5A, 10V 2.5V @ 1.12mA 7.2 nC @ 4.5 V ±20V 750 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPH4R003NL,L1Q

TPH4R003NL,L1Q

MOSFET N-CH 30V 40A 8SOP

Toshiba Semiconductor and Storage
4,249 -

RFQ

TPH4R003NL,L1Q

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 1.6W (Ta), 36W (Tc) 150°C (TJ) Surface Mount
TSM9435CS RLG

TSM9435CS RLG

MOSFET P-CHANNEL 30V 5.3A 8SOP

Taiwan Semiconductor Corporation
1,381 -

RFQ

TSM9435CS RLG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Tc) 4.5V, 10V 60mOhm @ 5.3A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 551.57 pF @ 15 V - 5.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU9HN65M2

STU9HN65M2

MOSFET N-CH 650V 5.5A IPAK

STMicroelectronics
2,397 -

RFQ

STU9HN65M2

Scheda tecnica

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.5A (Tc) 10V 820mOhm @ 2.5A, 10V 4V @ 250µA 11.5 nC @ 10 V ±25V 325 pF @ 100 V - 60W (Tc) 150°C (TJ) Through Hole
FQU5N40TU

FQU5N40TU

MOSFET N-CH 400V 3.4A IPAK

onsemi
2,336 -

RFQ

FQU5N40TU

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.4A (Tc) 10V 1.6Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N1R2CH C5G

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation
3,474 -

RFQ

TSM80N1R2CH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1N120P

IXTY1N120P

MOSFET N-CH 1200V 1A TO252

IXYS
2,086 -

RFQ

IXTY1N120P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) - - - - - - - - - Surface Mount
IPI60R165CPAKSA1

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

Infineon Technologies
2,010 -

RFQ

IPI60R165CPAKSA1

Scheda tecnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA20N60-F109

FCA20N60-F109

MOSFET N-CH 600V 20A TO3PN

onsemi
3,791 -

RFQ

FCA20N60-F109

Scheda tecnica

Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB31N65M5

STB31N65M5

MOSFET N-CH 650V 22A D2PAK

STMicroelectronics
2,925 -

RFQ

STB31N65M5

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 148mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 150W (Tc) 150°C (TJ) Surface Mount
STH300NH02L-6

STH300NH02L-6

MOSFET N-CH 24V 180A H2PAK

STMicroelectronics
3,251 -

RFQ

STH300NH02L-6

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ III Active N-Channel MOSFET (Metal Oxide) 24 V 180A (Tc) 5V, 10V 1.2mOhm @ 80A, 10V 1V @ 250µA 109 nC @ 10 V ±20V 7050 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306TRL

AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,482 -

RFQ

AUIRFS3306TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1405ZS-7TRL

AUIRF1405ZS-7TRL

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,658 -

RFQ

AUIRF1405ZS-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB026N10NF2SATMA1

IPB026N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,841 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STP27N60M2-EP

STP27N60M2-EP

MOSFET N-CH 600V 20A TO220

STMicroelectronics
3,804 -

RFQ

STP27N60M2-EP

Scheda tecnica

Tube MDmesh™ M2-EP Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 163mOhm @ 10A, 10V 4.75V @ 250µA 33 nC @ 10 V ±25V 1320 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R150CFDATMA2

IPB65R150CFDATMA2

MOSFET N-CH 650V 22.4A TO263-3

Infineon Technologies
2,232 -

RFQ

IPB65R150CFDATMA2

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C01NT3G

NTMFS4C01NT3G

MOSFET N-CH 30V 47A/303A 5DFN

onsemi
3,635 -

RFQ

NTMFS4C01NT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 303A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.2W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP11N60S5XKSA1

SPP11N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,482 -

RFQ

SPP11N60S5XKSA1

Scheda tecnica

Tube * Not For New Designs - - - - - - - - - - - - - -
IPP120N08S404AKSA1

IPP120N08S404AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
2,505 -

RFQ

IPP120N08S404AKSA1

Scheda tecnica

Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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