Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP2P40-F080

FQP2P40-F080

MOSFET P-CH 400V 2A TO220-3

onsemi
1,708 -

RFQ

FQP2P40-F080

Scheda tecnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 6.5Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 350 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK6P65W,RQ

TK6P65W,RQ

MOSFET N-CH 650V 5.8A DPAK

Toshiba Semiconductor and Storage
1,296 -

RFQ

TK6P65W,RQ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) Surface Mount
RCD100N19TL

RCD100N19TL

MOSFET N-CH 190V 10A CPT3

Rohm Semiconductor
1,163 -

RFQ

RCD100N19TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 190 V 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V 2.5V @ 1mA 52 nC @ 10 V ±20V 2000 pF @ 25 V - 850mW (Ta), 20W (Tc) 150°C (TJ) Surface Mount
SI4386DY-T1-GE3

SI4386DY-T1-GE3

MOSFET N-CH 30V 11A 8SO

Vishay Siliconix
1,778 -

RFQ

SI4386DY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 2.5V @ 250µA 18 nC @ 4.5 V ±20V - - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6619TR1PBF

IRF6619TR1PBF

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
2,000 -

RFQ

IRF6619TR1PBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR420TRPBF

IRFR420TRPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
1,263 -

RFQ

IRFR420TRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR024TRPBF

IRFR024TRPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
3,200 -

RFQ

IRFR024TRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2D8N025S

FDMC2D8N025S

MOSFET N-CH 25V 124A POWER33

onsemi
1,146 -

RFQ

FDMC2D8N025S

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 124A (Tc) 4.5V, 10V 1.9mOhm @ 28A, 10V 3V @ 1mA 63 nC @ 10 V ±16V 4615 pF @ 13 V - 47W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MCAC60N10YA-TP

MCAC60N10YA-TP

N-CHANNEL MOSFET, DFN5060

Micro Commercial Co
2,814 -

RFQ

MCAC60N10YA-TP

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 60A 4.5V, 10V 8.6mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 2270 pF @ 50 V - 88W (Tj) -55°C ~ 150°C (TJ) Surface Mount
STL12N3LLH5

STL12N3LLH5

MOSFET N-CH 30V 12A POWERFLAT

STMicroelectronics
2,668 -

RFQ

STL12N3LLH5

Scheda tecnica

Tape & Reel (TR) STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 9mOhm @ 6A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±22V 1500 pF @ 25 V - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4100DY-T1-GE3

SI4100DY-T1-GE3

MOSFET N-CH 100V 6.8A 8SO

Vishay Siliconix
2,190 -

RFQ

SI4100DY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 6V, 10V 63mOhm @ 4.4A, 10V 4.5V @ 250µA 20 nC @ 10 V ±20V 600 pF @ 50 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSH070N05TB1

RSH070N05TB1

MOSFET N-CH 45V 7A 8SOP

Rohm Semiconductor
1,491 -

RFQ

RSH070N05TB1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 7A (Ta) 4V, 10V 25mOhm @ 7A, 10V 2.5V @ 1mA 16.8 nC @ 5 V ±20V 1000 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
TK10E80W,S1X

TK10E80W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,102 -

RFQ

TK10E80W,S1X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 130W (Tc) 150°C Through Hole
SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix
2,778 -

RFQ

SIHH186N60EF-T1GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOWF095A60

AOWF095A60

MOSFET N-CH 600V 38A TO262F

Alpha & Omega Semiconductor Inc.
2,070 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tj) 10V 95mOhm @ 19A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4010 pF @ 100 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY10P15T

IXTY10P15T

MOSFET P-CH 150V 10A TO252

IXYS
2,044 -

RFQ

IXTY10P15T

Scheda tecnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 350mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±15V 2210 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY32P05T

IXTY32P05T

MOSFET P-CH 50V 32A TO252

IXYS
2,012 -

RFQ

IXTY32P05T

Scheda tecnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 32A (Tc) 10V 39mOhm @ 16A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 1975 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N100P-TRL

IXTA3N100P-TRL

MOSFET N-CH 1000V 3A TO263

IXYS
3,925 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH10H1M7STLW-13

DMTH10H1M7STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated
3,592 -

RFQ

DMTH10H1M7STLW-13

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 2mOhm @ 30A, 10V 4V @ 250µA 147 nC @ 10 V ±20V 9871 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH8001STLW-13

DMTH8001STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated
2,183 -

RFQ

DMTH8001STLW-13

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 270A (Tc) 10V 1.7mOhm @ 30A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 8894 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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