Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA102N15T-TRL

IXTA102N15T-TRL

MOSFET N-CH 150V 102A TO263

IXYS
2,414 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 51A, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMT061N60S5F

NTMT061N60S5F

SUPERFET5 FRFET, 61MOHM, PQFN88

onsemi
3,429 -

RFQ

NTMT061N60S5F

Scheda tecnica

Tape & Reel (TR) SuperFET® V, FRFET® Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 61mOhm @ 20.5A, 10V 4.8V @ 4.6mA 76 nC @ 10 V ±30V 4175 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB33N60M6

STB33N60M6

MOSFET N-CH 600V 25A D2PAK

STMicroelectronics
3,905 -

RFQ

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12.5A, 10V 4.75V @ 250µA 33.4 nC @ 10 V ±25V 1515 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP8N85X

IXFP8N85X

MOSFET N-CH 850V 8A TO220AB

IXYS
3,238 -

RFQ

IXFP8N85X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IWM023N08NM5XUMA1

IWM023N08NM5XUMA1

TRENCH 40<-<100V

Infineon Technologies
2,474 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRFR1N60ATRPBF

IRFR1N60ATRPBF

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
1,014 -

RFQ

IRFR1N60ATRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR622DP-T1-RE3

SIR622DP-T1-RE3

MOSFET N-CH 150V 12.6A PPAK

Vishay Siliconix
14,866 -

RFQ

SIR622DP-T1-RE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 12.6A (Ta), 51.6A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6504KND3TL1

R6504KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 4

Rohm Semiconductor
2,470 -

RFQ

R6504KND3TL1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V 5V @ 130µA 10 nC @ 10 V ±20V 270 pF @ 25 V - 58W (Tc) 150°C (TJ) Surface Mount
SI4686DY-T1-GE3

SI4686DY-T1-GE3

MOSFET N-CH 30V 18.2A 8SO

Vishay Siliconix
2,378 -

RFQ

SI4686DY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET®, WFET® Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CDM7-650 TR13 PBFREE

CDM7-650 TR13 PBFREE

MOSFET N-CH 650V 7A DPAK

Central Semiconductor Corp
2,193 -

RFQ

CDM7-650 TR13 PBFREE

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 1.5Ohm @ 3.5A, 10V 4V @ 250µA 16.8 nC @ 10 V 30V 754 pF @ 25 V - 1.12W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NP60N04VLK-E1-AY

NP60N04VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics America Inc
2,107 -

RFQ

NP60N04VLK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.9mOhm @ 30A, 10V 2.5V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Surface Mount
NP60N06VLK-E1-AY

NP60N06VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics America Inc
1,203 -

RFQ

NP60N06VLK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 7.9mOhm @ 30A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 3600 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Surface Mount
FQPF30N06L

FQPF30N06L

MOSFET N-CH 60V 22.5A TO220F

onsemi
983 -

RFQ

FQPF30N06L

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 22.5A (Tc) 5V, 10V 35mOhm @ 11.3A, 10V 2.5V @ 250µA 20 nC @ 5 V ±20V 1040 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD2N62K3

STD2N62K3

MOSFET N-CH 620V 2.2A DPAK

STMicroelectronics
2,437 -

RFQ

STD2N62K3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 340 pF @ 50 V - 45W (Tc) 150°C (TJ) Surface Mount
TSM950N10CW RPG

TSM950N10CW RPG

MOSFET N-CH 100V 6.5A SOT223

Taiwan Semiconductor Corporation
1,415 -

RFQ

TSM950N10CW RPG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 4.5V, 10V 95mOhm @ 5A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 1480 pF @ 50 V - 9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP3NK60Z

STP3NK60Z

MOSFET N-CH 600V 2.4A TO220AB

STMicroelectronics
4,925 -

RFQ

STP3NK60Z

Scheda tecnica

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8 nC @ 10 V ±30V 311 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8647L

FDD8647L

MOSFET N-CH 40V 14A/42A DPAK

onsemi
1,859 -

RFQ

FDD8647L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 42A (Tc) 4.5V, 10V 9mOhm @ 13A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1640 pF @ 20 V - 3.1W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6004END3TL1

R6004END3TL1

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor
2,415 -

RFQ

R6004END3TL1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 59W (Tc) 150°C (TJ) Surface Mount
FQP19N20

FQP19N20

MOSFET N-CH 200V 19.4A TO220-3

onsemi
992 -

RFQ

FQP19N20

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIRA80DP-T1-RE3

SIRA80DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,000 -

RFQ

SIRA80DP-T1-RE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.62mOhm @ 20A, 10V 2.2V @ 250µA 188 nC @ 10 V +20V, -16V 9530 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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