Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP35N60E-GE3

SIHP35N60E-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix
2,082 -

RFQ

SIHP35N60E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC218N06N3X7SA1

IPC218N06N3X7SA1

MV POWER MOS

Infineon Technologies
2,854 -

RFQ

IPC218N06N3X7SA1

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
STW74NF30

STW74NF30

MOSFET N-CH 300V 60A TO247

STMicroelectronics
2,023 -

RFQ

STW74NF30

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) - - - - - - - - - Through Hole
IXFA44N25X3

IXFA44N25X3

MOSFET N-CH 250V 44A TO263

IXYS
3,551 -

RFQ

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 40mOhm @ 22A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2200 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA50N20X3

IXFA50N20X3

MOSFET N-CH 200V 50A TO263

IXYS
3,689 -

RFQ

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 30mOhm @ 25A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2100 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP011N04NF2SAKMA1

IPP011N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
3,790 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IXFA7N100P-TRL

IXFA7N100P-TRL

MOSFET N-CH 1000V 7A TO263

IXYS
3,883 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT012N06NATMA1

IPT012N06NATMA1

MOSFET N-CH 60V 240A 8HSOF

Infineon Technologies
2,046 -

RFQ

IPT012N06NATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.3V @ 143µA 124 nC @ 10 V ±20V 9750 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP10N60P

IXTP10N60P

MOSFET N-CH 600V 10A TO220AB

IXYS
2,581 -

RFQ

IXTP10N60P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 250µA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C406NT1G

NTMFS5C406NT1G

T6 40V SG NCH SO8FL HEFET

onsemi
2,767 -

RFQ

Tape & Reel (TR) - Active - - - 353A (Tc) - - - - - - - - - -
IPP100N12S305AKSA1

IPP100N12S305AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies
980 -

RFQ

IPP100N12S305AKSA1

Scheda tecnica

Bulk,Tube * Active - - - - - - - - - - - - - -
IXTP8N70X2M

IXTP8N70X2M

MOSFET N-CH 700V 4A TO220

IXYS
3,830 -

RFQ

IXTP8N70X2M

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 550mOhm @ 500mA, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 10 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFU23N80K5

STFU23N80K5

MOSFET N-CH 800V 16A TO220FP

STMicroelectronics
2,091 -

RFQ

STFU23N80K5

Scheda tecnica

Tape & Reel (TR) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL3107PBF

IRFSL3107PBF

MOSFET N-CH 75V 195A TO262

Infineon Technologies
4,390 -

RFQ

IRFSL3107PBF

Scheda tecnica

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

Infineon Technologies
2,156 -

RFQ

IPDD60R125G7XTMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 125mOhm @ 6.4A, 10V 4V @ 320µA 27 nC @ 10 V ±20V 1080 pF @ 400 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N100P

IXTA3N100P

MOSFET N-CH 1000V 3A TO263

IXYS
2,507 -

RFQ

IXTA3N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP56N15T

IXTP56N15T

MOSFET N-CH 150V 56A TO220AB

IXYS
2,066 -

RFQ

IXTP56N15T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 56A (Tc) 10V 36mOhm @ 28A, 10V 4.5V @ 250µA 34 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM70N600ACL X0G

TSM70N600ACL X0G

MOSFET N-CH 700V 8A TO262S

Taiwan Semiconductor Corporation
2,807 -

RFQ

TSM70N600ACL X0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB120N10S403ATMA1

IPB120N10S403ATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
3,841 -

RFQ

IPB120N10S403ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.5mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R150CFDXKSA2

IPA65R150CFDXKSA2

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies
2,781 -

RFQ

IPA65R150CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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