Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQR50N04-3M8_GE3

SQR50N04-3M8_GE3

MOSFET N-CH 40V 50A DPAK

Vishay Siliconix
1,906 -

RFQ

SQR50N04-3M8_GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6700 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS7572S

FDMS7572S

MOSFET N-CH 25V 23A/49A 8PQFN

onsemi
7,040 -

RFQ

FDMS7572S

Scheda tecnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta), 49A (Tc) 4.5V, 10V 2.9mOhm @ 23A, 10V 3V @ 1mA 45 nC @ 10 V ±20V 2780 pF @ 13 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR120DP-T1-RE3

SIR120DP-T1-RE3

MOSFET N-CH 80V 24.7A/106A PPAK

Vishay Siliconix
2,850 -

RFQ

SIR120DP-T1-RE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 24.7A (Ta), 106A (Tc) 7.5V, 10V 3.55mOhm @ 15A, 10V 3.5V @ 250µA 94 nC @ 10 V ±20V 4150 pF @ 40 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJF6NA90_T0_00001

PJF6NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.
1,998 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Ta) 10V 2.3Ohm @ 3A, 10V 4V @ 250µA 23.6 nC @ 10 V ±30V 915 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB3N62K3

STB3N62K3

MOSFET N-CH 620V 2.7A D2PAK

STMicroelectronics
2,086 -

RFQ

STB3N62K3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 620 V 2.7A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4.5V @ 50µA 13 nC @ 10 V ±30V 385 pF @ 25 V - 45W (Tc) 150°C (TJ) Surface Mount
SISH106DN-T1-GE3

SISH106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK

Vishay Siliconix
1,492 -

RFQ

SISH106DN-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SK8603140L

SK8603140L

MOSFET N-CH 30V 25A 8HSO

Panasonic Electronic Components
2,940 -

RFQ

SK8603140L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 103A (Tc) 4.5V, 10V 2.2mOhm @ 23A, 10V 3V @ 5.85mA 37 nC @ 4.5 V ±20V 6860 pF @ 10 V - 2.5W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
TPH1R405PL,L1Q

TPH1R405PL,L1Q

MOSFET N-CH 45V 120A 8SOP

Toshiba Semiconductor and Storage
3,993 -

RFQ

TPH1R405PL,L1Q

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 120A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2.4V @ 500µA 74 nC @ 10 V ±20V 6300 pF @ 22.5 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
CSD17505Q5A

CSD17505Q5A

MOSFET N-CH 30V 24A/100A 8VSON

Texas Instruments
2,383 -

RFQ

CSD17505Q5A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 1.8V @ 250µA 13 nC @ 4.5 V ±20V 1980 pF @ 15 V - 3.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RS1E350BNTB

RS1E350BNTB

MOSFET N-CH 30V 35A 8HSOP

Rohm Semiconductor
1,593 -

RFQ

RS1E350BNTB

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 1.7mOhm @ 35A, 10V 2.5V @ 1mA 185 nC @ 10 V ±20V 7900 pF @ 15 V - 35W (Tc) 150°C (TJ) Surface Mount
IXTA90N075T2

IXTA90N075T2

MOSFET N-CH 75V 90A TO263

IXYS
3,610 -

RFQ

IXTA90N075T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM1NB60CH C5G

TSM1NB60CH C5G

MOSFET N-CHANNEL 600V 1A TO251

Taiwan Semiconductor Corporation
1,550 -

RFQ

TSM1NB60CH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 10Ohm @ 500mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDBL9406L-F085

FDBL9406L-F085

MOSFET N-CH 40V 43A/240A 8HPSOF

onsemi
2,545 -

RFQ

FDBL9406L-F085

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 43A (Ta), 240A (Tc) 4.5V, 10V 1.1mOhm @ 80A, 10V 3V @ 250µA 121 nC @ 10 V ±20V 8600 pF @ 20 V - 3.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP90N06VDK-E1-AY

NP90N06VDK-E1-AY

POWER TRANSISTOR N-CH AUTO POWER

Renesas Electronics America Inc
2,425 -

RFQ

NP90N06VDK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 6000 pF @ 25 V - 1.2W (Ta), 147W (Tc) 175°C Surface Mount
IXTA12N65X2

IXTA12N65X2

MOSFET N-CH 650V 12A TO263AA

IXYS
3,797 -

RFQ

IXTA12N65X2

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 1100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM16ND50CI C0G

TSM16ND50CI C0G

MOSFET N-CH 500V 16A ITO220

Taiwan Semiconductor Corporation
2,651 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 350mOhm @ 4A, 10V 4.5V @ 250µA 53 nC @ 10 V ±30V 2551 pF @ 50 V - 59.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N100D2HV-TRL

IXTA3N100D2HV-TRL

MOSFET N-CH 1000V 3A TO263HV

IXYS
3,865 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB2532-F085

FDB2532-F085

MOSFET N-CH 150V 79A TO263AB

onsemi
3,371 -

RFQ

FDB2532-F085

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1N120P

IXTP1N120P

MOSFET N-CH 1200V 1A TO220AB

IXYS
3,260 -

RFQ

IXTP1N120P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±20V 550 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA20N50P3

IXFA20N50P3

MOSFET N-CH 500V 20A TO263

IXYS
2,188 -

RFQ

IXFA20N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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