Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RSS095N05FU6TB

RSS095N05FU6TB

MOSFET N-CH 45V 9.5A 8SOP

Rohm Semiconductor
1,175 -

RFQ

RSS095N05FU6TB

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 9.5A (Ta) 4V, 10V 16mOhm @ 9.5A, 10V - 26.5 nC @ 5 V 20V 1830 pF @ 10 V - 2W (Ta) - Surface Mount
SI4430BDY-T1-E3

SI4430BDY-T1-E3

MOSFET N-CH 30V 14A 8SO

Vishay Siliconix
1,678 -

RFQ

SI4430BDY-T1-E3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V 3V @ 250µA 36 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF820STRRPBF

IRF820STRRPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
1,596 -

RFQ

IRF820STRRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4190ADY-T1-GE3

SI4190ADY-T1-GE3

MOSFET N-CH 100V 18.4A 8SO

Vishay Siliconix
3,640 -

RFQ

SI4190ADY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18.4A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 2.8V @ 250µA 67 nC @ 10 V ±20V 1970 pF @ 50 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSS095N05FRATB

RSS095N05FRATB

MOSFET N-CH 45V 9.5A 8SOP

Rohm Semiconductor
2,285 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 9.5A (Ta) 4V, 10V 16mOhm @ 9.5A, 10V 2.5V @ 1mA 26.5 nC @ 5 V ±20V 1830 pF @ 10 V - 1.4W (Ta) 150°C (TJ) Surface Mount
STB100NF03L-03T4

STB100NF03L-03T4

MOSFET N-CH 30V 100A D2PAK

STMicroelectronics
3,671 -

RFQ

STB100NF03L-03T4

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 250µA 88 nC @ 5 V ±16V 6200 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

MOSFET N-CH 30V 15A PPAK SO-8

Vishay Siliconix
1,664 -

RFQ

SI7892BDP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP690N60E-GE3

SIHP690N60E-GE3

MOSFET N-CH 600V 6.4A TO220AB

Vishay Siliconix
1,040 -

RFQ

SIHP690N60E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 6.4A (Tc) 10V 700mOhm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 347 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18512Q5B

CSD18512Q5B

MOSFET N-CH 40V 211A 8VSON

Texas Instruments
4,951 -

RFQ

CSD18512Q5B

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 211A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.2V @ 250µA - ±20V 7120 pF @ 20 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHB45NQ10T,118

PHB45NQ10T,118

MOSFET N-CH 100V 47A D2PAK

Nexperia USA Inc.
1,189 -

RFQ

PHB45NQ10T,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 25mOhm @ 25A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TQM250NB06CR RLG

TQM250NB06CR RLG

MOSFET N-CH 60V 7A/32A 8PDFNU

Taiwan Semiconductor Corporation
2,436 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 32A (Tc) 7V, 10V 25mOhm @ 7A, 10V 3.8V @ 250µA 24 nC @ 10 V ±20V 1396 pF @ 30 V - 3.1W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IXTA50N25T-TRL

IXTA50N25T-TRL

MOSFET N-CH 250V 50A TO263

IXYS
3,602 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 50mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMJS0D7N03CGTWG

NTMJS0D7N03CGTWG

WIDE SOA

onsemi
2,651 -

RFQ

NTMJS0D7N03CGTWG

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 59A (Ta), 410A (Tc) 10V 650µOhm @ 30A, 10V 2.2V @ 280µA 147 nC @ 10 V ±20V 12300 pF @ 15 V - 4W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOK9N90

AOK9N90

MOSFET N-CH 900V 9A TO247

Alpha & Omega Semiconductor Inc.
2,448 -

RFQ

AOK9N90

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Tc) 10V 1.3Ohm @ 4.5A, 10V 4.5V @ 250µA 58 nC @ 10 V ±30V 2560 pF @ 25 V - 368W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPF014N08NF2SATMA1

IPF014N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
2,287 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AUIRF2804L

AUIRF2804L

MOSFET N-CH 40V 195A TO262

Infineon Technologies
2,050 -

RFQ

AUIRF2804L

Scheda tecnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA42N25P

IXTA42N25P

MOSFET N-CH 250V 42A TO263

IXYS
2,091 -

RFQ

IXTA42N25P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP20N65X2M

IXTP20N65X2M

MOSFET N-CH 650V 20A TO220

IXYS
3,592 -

RFQ

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA170N075T2

IXTA170N075T2

MOSFET N-CH 75V 170A TO263

IXYS
3,688 -

RFQ

IXTA170N075T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6860 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA200N055T2-7

IXTA200N055T2-7

MOSFET N-CH 55V 200A TO263-7

IXYS
3,664 -

RFQ

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6970 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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