Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR688DP-T1-GE3

SIR688DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
2,117 -

RFQ

SIR688DP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 66 nC @ 10 V ±20V 3105 pF @ 30 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK661R9-40C,118

BUK661R9-40C,118

MOSFET N-CH 40V 120A D2PAK

Nexperia USA Inc.
2,240 -

RFQ

BUK661R9-40C,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 25A, 10V 2.8V @ 1mA 260 nC @ 10 V ±16V 15100 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM4NB65CP ROG

TSM4NB65CP ROG

MOSFET N-CHANNEL 650V 4A TO252

Taiwan Semiconductor Corporation
2,456 -

RFQ

TSM4NB65CP ROG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3.37Ohm @ 2A, 10V 4.5V @ 250µA 13.46 nC @ 10 V ±30V 549 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM5NC50CP ROG

TSM5NC50CP ROG

MOSFET N-CHANNEL 500V 5A TO252

Taiwan Semiconductor Corporation
2,393 -

RFQ

TSM5NC50CP ROG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.38Ohm @ 2.4A, 10V 4.5V @ 250µA 15 nC @ 10 V ±30V 586 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD4NK80Z-1

STD4NK80Z-1

MOSFET N-CH 800V 3A IPAK

STMicroelectronics
4,742 -

RFQ

STD4NK80Z-1

Scheda tecnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 4.5V @ 50µA 22.5 nC @ 10 V ±30V 575 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU150N3LLH6

STU150N3LLH6

MOSFET N-CH 30V 80A IPAK

STMicroelectronics
2,777 -

RFQ

STU150N3LLH6

Scheda tecnica

Tube DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 4040 pF @ 25 V - 110W (Tc) 175°C (TJ) Through Hole
STL25N15F3

STL25N15F3

MOSFET N-CH 150V 25A POWERFLAT

STMicroelectronics
2,434 -

RFQ

STL25N15F3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 10V 57mOhm @ 3A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1300 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFI13N65M2

STFI13N65M2

MOSFET N-CH 650V 10A I2PAKFP

STMicroelectronics
1,500 -

RFQ

STFI13N65M2

Scheda tecnica

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
STFI10N62K3

STFI10N62K3

MOSFET N CH 620V 8.4A I2PAKFP

STMicroelectronics
1,498 -

RFQ

STFI10N62K3

Scheda tecnica

Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 620 V 8.4A (Tc) 10V 750mOhm @ 4A, 10V 4.5V @ 100µA 42 nC @ 10 V ±30V 1250 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFI15N60M2-EP

STFI15N60M2-EP

MOSFET N-CH 600V 11A I2PAKFP

STMicroelectronics
1,496 -

RFQ

STFI15N60M2-EP

Scheda tecnica

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 378mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N1R2CI C0G

TSM80N1R2CI C0G

MOSFET N-CH 800V 5.5A ITO220AB

Taiwan Semiconductor Corporation
2,264 -

RFQ

TSM80N1R2CI C0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA120N075T2

IXTA120N075T2

MOSFET N-CH 75V 120A TO263

IXYS
2,246 -

RFQ

IXTA120N075T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 7.7mOhm @ 60A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 4740 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324WL

AUIRF1324WL

MOSFET N-CH 24V 240A TO262-3

Infineon Technologies
2,440 -

RFQ

AUIRF1324WL

Scheda tecnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) 10V 1.3mOhm @ 195A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 7630 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP18N65X2M

IXFP18N65X2M

MOSFET N-CH 650V 18A TO220

IXYS
3,459 -

RFQ

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP28N60EF-GE3

SIHP28N60EF-GE3

MOSFET N-CH 600V 28A TO220AB

Vishay Siliconix
3,976 -

RFQ

SIHP28N60EF-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF30N60E-GE3

SIHF30N60E-GE3

MOSFET N-CH 600V 29A TO220

Vishay Siliconix
3,502 -

RFQ

SIHF30N60E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
R5021ANJTL

R5021ANJTL

MOSFET N-CH 500V 21A LPTS

Rohm Semiconductor
3,584 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) - 220mOhm @ 10.5A, 10V 4.5V @ 1mA 64 nC @ 10 V - 2300 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
SIHFB20N50K-E3

SIHFB20N50K-E3

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix
3,412 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N100D2-TRL

IXTA3N100D2-TRL

MOSFET N-CH 1000V 3A TO263

IXYS
2,309 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6515KNZC17

R6515KNZC17

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor
3,310 -

RFQ

R6515KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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