Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6015KNZC17

R6015KNZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor
3,623 -

RFQ

R6015KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015ENZC17

R6015ENZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor
2,186 -

RFQ

R6015ENZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
IRFP448PBF

IRFP448PBF

MOSFET N-CH 500V 11A TO247-3

Vishay Siliconix
2,060 -

RFQ

IRFP448PBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE30PBF

IRFPE30PBF

MOSFET N-CH 800V 4.1A TO247-3

Vishay Siliconix
3,743 -

RFQ

IRFPE30PBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

MOSFET N-CH 1200V 1.4A TO263

IXYS
2,533 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 700mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±30V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCMT080N65S3

FCMT080N65S3

MOSFET N-CH 650V 38A 4TDFN

onsemi
3,437 -

RFQ

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 80mOhm @ 19A, 10V 4.5V @ 880µA 71 nC @ 10 V ±30V 2765 pF @ 400 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMJS2D5N06CLTWG

NTMJS2D5N06CLTWG

MOSFET N-CH 60V 3.9A/113A 8LFPAK

onsemi
3,584 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 3.9A (Ta), 113A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.9W (Ta), 113A (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDTL03N150CG

NDTL03N150CG

MOSFET N-CH 1500V 2.5A TO3P

onsemi
3,609 -

RFQ

NDTL03N150CG

Scheda tecnica

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 2.5W (Ta), 140W (Tc) 150°C (TJ) Through Hole
STP35N60M2-EP

STP35N60M2-EP

MOSFET N-CH 600V TO220

STMicroelectronics
3,296 -

RFQ

Tape & Reel (TR) MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) - - - - - - - - 150°C (TJ) Through Hole
R6018ANJTL

R6018ANJTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor
3,651 -

RFQ

R6018ANJTL

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 2050 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
SPA15N60CFDXKSA1

SPA15N60CFDXKSA1

MOSFET N-CH 650V 13.4A TO220-FP

Infineon Technologies
2,366 -

RFQ

SPA15N60CFDXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N60CFDXKSA1

SPP15N60CFDXKSA1

LOW POWER_LEGACY

Infineon Technologies
2,876 -

RFQ

SPP15N60CFDXKSA1

Scheda tecnica

Tube * Not For New Designs - - - - - - - - - - - - - -
IXTA60N20T-TRL

IXTA60N20T-TRL

MOSFET N-CH 200V 60A TO263

IXYS
3,285 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP14N60PM

IXTP14N60PM

MOSFET N-CH 600V 7A TO220

IXYS
3,796 -

RFQ

IXTP14N60PM

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP024N06N3GXKSA1

IPP024N06N3GXKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
400 -

RFQ

IPP024N06N3GXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI7812DN-T1-E3

SI7812DN-T1-E3

MOSFET N-CH 75V 16A PPAK1212-8

Vishay Siliconix
2,396 -

RFQ

SI7812DN-T1-E3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 16A (Tc) 4.5V, 10V 37mOhm @ 7.2A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 840 pF @ 35 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB025N10N3GE8187ATMA1

IPB025N10N3GE8187ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
3,127 -

RFQ

IPB025N10N3GE8187ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDUL03N150CG

NDUL03N150CG

MOSFET N-CH 1500V 2.5A TO3P

onsemi
2,243 -

RFQ

NDUL03N150CG

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 3W (Ta), 50W (Tc) 150°C (TJ) Through Hole
PSMN015-100B,118

PSMN015-100B,118

MOSFET N-CH 100V 75A D2PAK

Nexperia USA Inc.
1,085 -

RFQ

PSMN015-100B,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 15mOhm @ 25A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 4900 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK25E60X5,S1X

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage
3,838 -

RFQ

TK25E60X5,S1X

Scheda tecnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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